In this work, whole metal oxide-based p-NiO/i-Ga2O3-i-Al2O3:Ga2O3 multiple quantum wells (MQWs)/n-HfO2:Ga2O3 deep ultraviolet light-emitting diodes (DUV-LEDs) were manufactured and studied. To investigate the improved luminance of the MQWs, single i-Ga2O3 active layer was utilized to replace MQWs in the DUV-LEDs. The vapor cooling condensation system was used to deposit n-HfO2:Ga2O3, i-Ga2O3, and i-Al2O3:Ga2O3 films on sapphire substrate. Besides, the radio frequency magnetron sputtering system was used to deposit p-NiO film onto the MQWs. As the measurement of electroluminescence spectra, the peak emission wavelength of both the devices with MQWs and i-Ga2O3 active layer was approximately 243 nm. Compared with the utilization of single i-Ga2O3 active layer, the peak luminance intensity of the DUV-LEDs with MQWs was enhanced due to the effective carrier recombination in the i-Ga2O3 well caused by the effective carrier block of the i-Al2O3:Ga2O3 barrier in the MQWs.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering