Whole Metal Oxide p-i-n Deep Ultraviolet Light-Emitting Diodes Using i-GaO Active Emissive Film

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Abstract

In this work, whole transparent p-NiO/i-Ga2O3/n-Ga2O3:Si deep ultraviolet light-emitting diodes (DUV-LEDs) were fabricated and studied. The p-NiO film was deposited using a radio frequency magnetron sputtering system. The i-Ga2O3 film and the n-Ga2O3:Si film were deposited using a vapor cooling condensation system at about 80 K and then annealed in an oxygen ambience at 900 °C for 60 minutes. Due to the significantly reduced oxygen vacancies and intrinsic defects resided in the i-Ga2O3 active emissive film, UV-C LEDs were obtained. By measuring the electroluminescence spectrum of the p-i-n DUV-LEDs, the peak wavelength of 240.0 nm and the half width at half maximum of 20.2 nm were obtained.

Original languageEnglish
Article number9121667
Pages (from-to)941-943
Number of pages3
JournalIEEE Photonics Technology Letters
Volume32
Issue number15
DOIs
Publication statusPublished - 2020 Aug 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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