Whole Metal Oxide p-i-n Deep Ultraviolet Light-Emitting Diodes Using i-GaO Active Emissive Film

Hsin Ying Lee; Chih Hsun Lin; Ching Ting Lee

doi:10.1109/LPT.2020.3003594

Whole Metal Oxide p-i-n Deep Ultraviolet Light-Emitting Diodes Using i-GaO Active Emissive Film

Hsin Ying Lee, Chih Hsun Lin, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this work, whole transparent p-NiO/i-Ga2O3/n-Ga2O3:Si deep ultraviolet light-emitting diodes (DUV-LEDs) were fabricated and studied. The p-NiO film was deposited using a radio frequency magnetron sputtering system. The i-Ga2O3 film and the n-Ga2O3:Si film were deposited using a vapor cooling condensation system at about 80 K and then annealed in an oxygen ambience at 900 °C for 60 minutes. Due to the significantly reduced oxygen vacancies and intrinsic defects resided in the i-Ga2O3 active emissive film, UV-C LEDs were obtained. By measuring the electroluminescence spectrum of the p-i-n DUV-LEDs, the peak wavelength of 240.0 nm and the half width at half maximum of 20.2 nm were obtained.

Original language	English
Article number	9121667
Pages (from-to)	941-943
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	32
Issue number	15
DOIs	https://doi.org/10.1109/LPT.2020.3003594
Publication status	Published - 2020 Aug 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "Whole Metal Oxide p-i-n Deep Ultraviolet Light-Emitting Diodes Using i-GaO Active Emissive Film",

abstract = "In this work, whole transparent p-NiO/i-Ga2O3/n-Ga2O3:Si deep ultraviolet light-emitting diodes (DUV-LEDs) were fabricated and studied. The p-NiO film was deposited using a radio frequency magnetron sputtering system. The i-Ga2O3 film and the n-Ga2O3:Si film were deposited using a vapor cooling condensation system at about 80 K and then annealed in an oxygen ambience at 900 °C for 60 minutes. Due to the significantly reduced oxygen vacancies and intrinsic defects resided in the i-Ga2O3 active emissive film, UV-C LEDs were obtained. By measuring the electroluminescence spectrum of the p-i-n DUV-LEDs, the peak wavelength of 240.0 nm and the half width at half maximum of 20.2 nm were obtained.",

author = "Lee, {Hsin Ying} and Lin, {Chih Hsun} and Lee, {Ching Ting}",

note = "Funding Information: Manuscript received May 22, 2020; accepted June 16, 2020. Date of publication June 19, 2020; date of current version July 7, 2020. This work was supported by the Ministry of Science and Technology, Republic of China, under Grant MOST 108-2221-E-006-215-MY3 and Grant MOST 108-2221-E-155-029-MY3. (Corresponding author: Ching-Ting Lee.) Hsin-Ying Lee is with the Department of Photonics, National Cheng Kung University, Tainan 701, Taiwan.",

year = "2020",

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doi = "10.1109/LPT.2020.3003594",

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N1 - Funding Information: Manuscript received May 22, 2020; accepted June 16, 2020. Date of publication June 19, 2020; date of current version July 7, 2020. This work was supported by the Ministry of Science and Technology, Republic of China, under Grant MOST 108-2221-E-006-215-MY3 and Grant MOST 108-2221-E-155-029-MY3. (Corresponding author: Ching-Ting Lee.) Hsin-Ying Lee is with the Department of Photonics, National Cheng Kung University, Tainan 701, Taiwan.

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N2 - In this work, whole transparent p-NiO/i-Ga2O3/n-Ga2O3:Si deep ultraviolet light-emitting diodes (DUV-LEDs) were fabricated and studied. The p-NiO film was deposited using a radio frequency magnetron sputtering system. The i-Ga2O3 film and the n-Ga2O3:Si film were deposited using a vapor cooling condensation system at about 80 K and then annealed in an oxygen ambience at 900 °C for 60 minutes. Due to the significantly reduced oxygen vacancies and intrinsic defects resided in the i-Ga2O3 active emissive film, UV-C LEDs were obtained. By measuring the electroluminescence spectrum of the p-i-n DUV-LEDs, the peak wavelength of 240.0 nm and the half width at half maximum of 20.2 nm were obtained.

AB - In this work, whole transparent p-NiO/i-Ga2O3/n-Ga2O3:Si deep ultraviolet light-emitting diodes (DUV-LEDs) were fabricated and studied. The p-NiO film was deposited using a radio frequency magnetron sputtering system. The i-Ga2O3 film and the n-Ga2O3:Si film were deposited using a vapor cooling condensation system at about 80 K and then annealed in an oxygen ambience at 900 °C for 60 minutes. Due to the significantly reduced oxygen vacancies and intrinsic defects resided in the i-Ga2O3 active emissive film, UV-C LEDs were obtained. By measuring the electroluminescence spectrum of the p-i-n DUV-LEDs, the peak wavelength of 240.0 nm and the half width at half maximum of 20.2 nm were obtained.

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Whole Metal Oxide p-i-n Deep Ultraviolet Light-Emitting Diodes Using i-GaO Active Emissive Film

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