Wide controllability of flatband voltage in la2O3 gate stack structures - Remarkable advantages of la2O3 over HfO2 -

K. Ohmori, P. Ahmet, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, N. Umezawa, K. Nakajima, M. Yoshitake, T. Nakayama, K. S. Chang, K. Kakushima, Y. Nara, M. L. Green, H. Iwai, K. Yamada, T. Chikyow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt-La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Gate Dielectrics 4
PublisherElectrochemical Society Inc.
Pages351-362
Number of pages12
Edition3
ISBN (Electronic)1566775035
DOIs
Publication statusPublished - 2006
EventPhysics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

Publication series

NameECS Transactions
Number3
Volume3
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherPhysics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting
Country/TerritoryMexico
CityCancun
Period06-10-2906-11-03

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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