Wide controllability of flatband voltage in la2O3 gate stack structures - Remarkable advantages of la2O3 over HfO2 -

K. Ohmori, P. Ahmet, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, N. Umezawa, K. Nakajima, M. Yoshitake, T. Nakayama, Kao-Shuo Chang, K. Kakushima, Y. Nara, M. L. Green, H. Iwai, K. Yamada, T. Chikyow

Research output: Contribution to journalConference article

Abstract

We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt-La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)351-362
Number of pages12
JournalECS Transactions
Volume3
Issue number3
DOIs
Publication statusPublished - 2006 Dec 1
EventPhysics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

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Controllability
Electric potential
Gases
Charge transfer
Annealing
Metals
Chemical analysis
High-k dielectric

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Ohmori, K., Ahmet, P., Shiraishi, K., Yamabe, K., Watanabe, H., Akasaka, Y., ... Chikyow, T. (2006). Wide controllability of flatband voltage in la2O3 gate stack structures - Remarkable advantages of la2O3 over HfO2 -. ECS Transactions, 3(3), 351-362. https://doi.org/10.1149/1.2355726
Ohmori, K. ; Ahmet, P. ; Shiraishi, K. ; Yamabe, K. ; Watanabe, H. ; Akasaka, Y. ; Umezawa, N. ; Nakajima, K. ; Yoshitake, M. ; Nakayama, T. ; Chang, Kao-Shuo ; Kakushima, K. ; Nara, Y. ; Green, M. L. ; Iwai, H. ; Yamada, K. ; Chikyow, T. / Wide controllability of flatband voltage in la2O3 gate stack structures - Remarkable advantages of la2O3 over HfO2 -. In: ECS Transactions. 2006 ; Vol. 3, No. 3. pp. 351-362.
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abstract = "We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt-La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond. copyright The Electrochemical Society.",
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Ohmori, K, Ahmet, P, Shiraishi, K, Yamabe, K, Watanabe, H, Akasaka, Y, Umezawa, N, Nakajima, K, Yoshitake, M, Nakayama, T, Chang, K-S, Kakushima, K, Nara, Y, Green, ML, Iwai, H, Yamada, K & Chikyow, T 2006, 'Wide controllability of flatband voltage in la2O3 gate stack structures - Remarkable advantages of la2O3 over HfO2 -', ECS Transactions, vol. 3, no. 3, pp. 351-362. https://doi.org/10.1149/1.2355726

Wide controllability of flatband voltage in la2O3 gate stack structures - Remarkable advantages of la2O3 over HfO2 -. / Ohmori, K.; Ahmet, P.; Shiraishi, K.; Yamabe, K.; Watanabe, H.; Akasaka, Y.; Umezawa, N.; Nakajima, K.; Yoshitake, M.; Nakayama, T.; Chang, Kao-Shuo; Kakushima, K.; Nara, Y.; Green, M. L.; Iwai, H.; Yamada, K.; Chikyow, T.

In: ECS Transactions, Vol. 3, No. 3, 01.12.2006, p. 351-362.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Wide controllability of flatband voltage in la2O3 gate stack structures - Remarkable advantages of la2O3 over HfO2 -

AU - Ohmori, K.

AU - Ahmet, P.

AU - Shiraishi, K.

AU - Yamabe, K.

AU - Watanabe, H.

AU - Akasaka, Y.

AU - Umezawa, N.

AU - Nakajima, K.

AU - Yoshitake, M.

AU - Nakayama, T.

AU - Chang, Kao-Shuo

AU - Kakushima, K.

AU - Nara, Y.

AU - Green, M. L.

AU - Iwai, H.

AU - Yamada, K.

AU - Chikyow, T.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt-La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond. copyright The Electrochemical Society.

AB - We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt-La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond. copyright The Electrochemical Society.

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