Wide controllability of flatband voltage in la2O3 gate stack structures - Remarkable advantages of la2O3 over HfO2 -

K. Ohmori; P. Ahmet; K. Shiraishi; K. Yamabe; H. Watanabe; Y. Akasaka; N. Umezawa; K. Nakajima; M. Yoshitake; T. Nakayama; K. S. Chang; K. Kakushima; Y. Nara; M. L. Green; H. Iwai; K. Yamada; T. Chikyow

doi:10.1149/1.2355726

Wide controllability of flatband voltage in la₂O₃ gate stack structures - Remarkable advantages of la₂O₃ over HfO₂ -

K. Ohmori
, P. Ahmet
, K. Shiraishi
, K. Yamabe
, H. Watanabe
, Y. Akasaka
, N. Umezawa
, K. Nakajima
, M. Yoshitake
, T. Nakayama
, K. S. Chang
, K. Kakushima
, Y. Nara
, M. L. Green
, H. Iwai
, K. Yamada
, T. Chikyow

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (V_fb) by using a combination of metal alloy (Pt-W)/La₂O₃ gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V _fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt-La₂O₃ interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La₂O₃ is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond. copyright The Electrochemical Society.

Original language	English
Title of host publication	Physics and Technology of High-k Gate Dielectrics 4
Publisher	Electrochemical Society Inc.
Pages	351-362
Number of pages	12
Edition	3
ISBN (Electronic)	1566775035
DOIs	https://doi.org/10.1149/1.2355726
Publication status	Published - 2006
Event	Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3

Publication series

Name	ECS Transactions
Number	3
Volume	3
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting
Country/Territory	Mexico
City	Cancun
Period	06-10-29 → 06-11-03

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/1.2355726

Cite this

Ohmori, K., Ahmet, P., Shiraishi, K., Yamabe, K., Watanabe, H., Akasaka, Y., Umezawa, N., Nakajima, K., Yoshitake, M., Nakayama, T., Chang, K. S., Kakushima, K., Nara, Y., Green, M. L., Iwai, H., Yamada, K., & Chikyow, T. (2006). Wide controllability of flatband voltage in la₂O₃ gate stack structures - Remarkable advantages of la₂O₃ over HfO₂ -. In Physics and Technology of High-k Gate Dielectrics 4 (3 ed., pp. 351-362). (ECS Transactions; Vol. 3, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/1.2355726

@inproceedings{e12de7104aaf4e5eac0744eba9a5eb6a,

title = "Wide controllability of flatband voltage in la2O3 gate stack structures - Remarkable advantages of la2O3 over HfO2 -",

abstract = "We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt-La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond. copyright The Electrochemical Society.",

author = "K. Ohmori and P. Ahmet and K. Shiraishi and K. Yamabe and H. Watanabe and Y. Akasaka and N. Umezawa and K. Nakajima and M. Yoshitake and T. Nakayama and Chang, \{K. S.\} and K. Kakushima and Y. Nara and Green, \{M. L.\} and H. Iwai and K. Yamada and T. Chikyow",

year = "2006",

doi = "10.1149/1.2355726",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "3",

pages = "351--362",

booktitle = "Physics and Technology of High-k Gate Dielectrics 4",

edition = "3",

note = "Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

}

Ohmori, K, Ahmet, P, Shiraishi, K, Yamabe, K, Watanabe, H, Akasaka, Y, Umezawa, N, Nakajima, K, Yoshitake, M, Nakayama, T, Chang, KS, Kakushima, K, Nara, Y, Green, ML, Iwai, H, Yamada, K & Chikyow, T 2006, Wide controllability of flatband voltage in la₂O₃ gate stack structures - Remarkable advantages of la₂O₃ over HfO₂ -. in Physics and Technology of High-k Gate Dielectrics 4. 3 edn, ECS Transactions, no. 3, vol. 3, Electrochemical Society Inc., pp. 351-362, Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting, Cancun, Mexico, 06-10-29. https://doi.org/10.1149/1.2355726

Wide controllability of flatband voltage in la₂O₃ gate stack structures - Remarkable advantages of la₂O₃ over HfO₂ -. / Ohmori, K.; Ahmet, P.; Shiraishi, K. et al.
Physics and Technology of High-k Gate Dielectrics 4. 3. ed. Electrochemical Society Inc., 2006. p. 351-362 (ECS Transactions; Vol. 3, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Wide controllability of flatband voltage in la2O3 gate stack structures - Remarkable advantages of la2O3 over HfO2 -

AU - Ohmori, K.

AU - Ahmet, P.

AU - Shiraishi, K.

AU - Yamabe, K.

AU - Watanabe, H.

AU - Akasaka, Y.

AU - Umezawa, N.

AU - Nakajima, K.

AU - Yoshitake, M.

AU - Nakayama, T.

AU - Chang, K. S.

AU - Kakushima, K.

AU - Nara, Y.

AU - Green, M. L.

AU - Iwai, H.

AU - Yamada, K.

AU - Chikyow, T.

PY - 2006

Y1 - 2006

N2 - We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt-La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond. copyright The Electrochemical Society.

AB - We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt-La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond. copyright The Electrochemical Society.

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U2 - 10.1149/1.2355726

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M3 - Conference contribution

AN - SCOPUS:33846980849

T3 - ECS Transactions

SP - 351

EP - 362

BT - Physics and Technology of High-k Gate Dielectrics 4

PB - Electrochemical Society Inc.

T2 - Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting

Y2 - 29 October 2006 through 3 November 2006

ER -