Wide linear sensing sensors using ZnO:Ta extended-gate field-effect- transistors

Ying Shuo Chiu, Ching Ting Lee, Li Ren Lou, Shu Ching Ho, Chun Te Chuang

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


To obtain wide linear pH sensing range, the tantalum doped zinc oxide (ZnO:Ta) thin film was deposited as the sensing membrane of extended-gate field-effect-transistor (EGFET) pH sensors using the vapor cooling condensation system. Compared with the ZnO EGFET pH sensors, the experimental results exhibited that the linear sensing pH range of the ZnO:Ta EGFET pH sensors was extended from the pH range of 4-12 to the pH range of 1.3-12. Furthermore, the ZnO:Ta pH sensors was stable in the whole extended pH range and showed favorable sensing sensitivity of 41.56 mV/pH. The AFM images of the ZnO:Ta sensing membrane after the measurement in strong acidic solution showed no observable surface damage, which further verified the high corrosion resistance of the ZnO:Ta sensing membrane.

Original languageEnglish
Pages (from-to)944-948
Number of pages5
JournalSensors and Actuators, B: Chemical
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry


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