TY - GEN
T1 - Wide tuning range millimeter-wave VCOs based on switchable inductive tuning methodology in 90nm CMOS technology
AU - Huang, Tzuen Hsi
AU - You, Pen Li
AU - Chiu, Chen Hao
AU - Wu, Chen Yu
N1 - Publisher Copyright:
© 2014 European Microwave Association.
PY - 2014/12/15
Y1 - 2014/12/15
N2 - This paper presents the application of switchable inductive tuning technique to the frequency tuning range (FTR) enhancement for millimeter-wave oscillators. By rearranging the induced-current path in the guard ring of a planar inductor, the inductance value can be changed and therefore the resulted total tuning range of the oscillator can be extended. Two VCOs are fabricated for demonstrating the effectiveness of this tuning technique. By using 90nm CMOS technology, a V-band 55 GHz direct VCO with an FTR of 9.95 GHz and a W-band push-push 109 GHz VCO with an FTR of 17.8 GHz are achieved. For the V-band VCO, the measured phase noise ranges from -110 to -120 dBc/Hz over the whole tuning range, no matter the switches are either turned on or off. The power consumption is 11.3 mW with a 0.9 V supply. The evaluated FOM is -184.2 dBc/Hz and FOMT is -189.3 dBc/Hz. For the W-band VCO, the measured phase noise is -108.9 dBc/Hz at 10 MHz offset from the carrier frequency of 100.6 GHz, while it consumes 22.8 mW from a 1.2 V supply. The evaluated FOM is -175.4 dBc/Hz and the FOMT is -179.5 dBc/Hz.
AB - This paper presents the application of switchable inductive tuning technique to the frequency tuning range (FTR) enhancement for millimeter-wave oscillators. By rearranging the induced-current path in the guard ring of a planar inductor, the inductance value can be changed and therefore the resulted total tuning range of the oscillator can be extended. Two VCOs are fabricated for demonstrating the effectiveness of this tuning technique. By using 90nm CMOS technology, a V-band 55 GHz direct VCO with an FTR of 9.95 GHz and a W-band push-push 109 GHz VCO with an FTR of 17.8 GHz are achieved. For the V-band VCO, the measured phase noise ranges from -110 to -120 dBc/Hz over the whole tuning range, no matter the switches are either turned on or off. The power consumption is 11.3 mW with a 0.9 V supply. The evaluated FOM is -184.2 dBc/Hz and FOMT is -189.3 dBc/Hz. For the W-band VCO, the measured phase noise is -108.9 dBc/Hz at 10 MHz offset from the carrier frequency of 100.6 GHz, while it consumes 22.8 mW from a 1.2 V supply. The evaluated FOM is -175.4 dBc/Hz and the FOMT is -179.5 dBc/Hz.
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U2 - 10.1109/EuMC.2014.6986499
DO - 10.1109/EuMC.2014.6986499
M3 - Conference contribution
AN - SCOPUS:84929249061
T3 - European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference
SP - 576
EP - 579
BT - European Microwave Week 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014
Y2 - 6 October 2014 through 9 October 2014
ER -