Wirelike growth of Si on an Au/Si(111) substrate by gas source molecular beam epitaxy

J. L. Liu; S. J. Cai; G. L. Jin; K. L. Wang

doi:10.1149/1.1390680

Wirelike growth of Si on an Au/Si(111) substrate by gas source molecular beam epitaxy

J. L. Liu, S. J. Cai, G. L. Jin, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Ultrafine Si nanowires are grown on an Au/Si(111) substrate using gas source molecular beam epitaxy. These Si wires with cross-sectional dimensions between 50 nm and 2 μm grow mainly with a growth axis parallel to the <111> direction. The growth rate of nanowires is independent of their diameters, i.e., nanowires with different diameters have the same growth rate. From the dependence of source gas concentration on the growth rate we conclude that this independence is a fundamental one even when gas pressure ranges as high as 1 × 10^-4 Torr. This method provides a possible alternative means for fabricating ultrafine silicon quantum wires.

Original language	English
Pages (from-to)	188-190
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	1
Issue number	4
DOIs	https://doi.org/10.1149/1.1390680
Publication status	Published - 1998 Oct

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.1390680

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AU - Jin, G. L.

AU - Wang, K. L.

PY - 1998/10

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N2 - Ultrafine Si nanowires are grown on an Au/Si(111) substrate using gas source molecular beam epitaxy. These Si wires with cross-sectional dimensions between 50 nm and 2 μm grow mainly with a growth axis parallel to the <111> direction. The growth rate of nanowires is independent of their diameters, i.e., nanowires with different diameters have the same growth rate. From the dependence of source gas concentration on the growth rate we conclude that this independence is a fundamental one even when gas pressure ranges as high as 1 × 10-4 Torr. This method provides a possible alternative means for fabricating ultrafine silicon quantum wires.

AB - Ultrafine Si nanowires are grown on an Au/Si(111) substrate using gas source molecular beam epitaxy. These Si wires with cross-sectional dimensions between 50 nm and 2 μm grow mainly with a growth axis parallel to the <111> direction. The growth rate of nanowires is independent of their diameters, i.e., nanowires with different diameters have the same growth rate. From the dependence of source gas concentration on the growth rate we conclude that this independence is a fundamental one even when gas pressure ranges as high as 1 × 10-4 Torr. This method provides a possible alternative means for fabricating ultrafine silicon quantum wires.

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Wirelike growth of Si on an Au/Si(111) substrate by gas source molecular beam epitaxy

Abstract

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