Wirelike growth of Si on an Au/Si(111) substrate by gas source molecular beam epitaxy

J. L. Liu, S. J. Cai, G. L. Jin, K. L. Wang

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13 Citations (Scopus)


Ultrafine Si nanowires are grown on an Au/Si(111) substrate using gas source molecular beam epitaxy. These Si wires with cross-sectional dimensions between 50 nm and 2 μm grow mainly with a growth axis parallel to the <111> direction. The growth rate of nanowires is independent of their diameters, i.e., nanowires with different diameters have the same growth rate. From the dependence of source gas concentration on the growth rate we conclude that this independence is a fundamental one even when gas pressure ranges as high as 1 × 10-4 Torr. This method provides a possible alternative means for fabricating ultrafine silicon quantum wires.

Original languageEnglish
Pages (from-to)188-190
Number of pages3
JournalElectrochemical and Solid-State Letters
Issue number4
Publication statusPublished - 1998 Oct

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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