Write-energy-saving ReRAM-based nonvolatile SRAM with redundant bit-write-aware controller for last-level caches

Tsai Kan Chien, Lih Yih Chiou, Yi Sung Tsou, Shyh Shyuan Sheu, Pei Hua Wang, Ming Jinn Tsai, Chih I. Wu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Nonvolatile static random-access memory (NV-SRAM) is a crucial component type for normally-off computing systems. This work proposes a novel 10T2R resistive random-access memory (ReRAM)-based NV-SRAM controller that is aware of redundant bit writes and considers the conditions of redundant bit writes. When data stored in SRAM cells are the same as the data in ReRAM devices, backup can be skipped. Otherwise, backup is performed. As a result, redundant bit-write conditions indicate that energy can be saved when backing up data. Simulations show that as much as 93% of typical energy requirements can be saved when the high resistive state is larger than 10 MΩ. As long as the probability of redundant bit writes is larger than 25%, backup energy saving can be achieved. The ReRAM chip is manufactured with 90 nm CMOS technology and the ReRAM process of the Industrial Technology Research Institute. This design can be applied to L2 and L3 caches.

Original languageEnglish
Title of host publicationISLPED 2017 - IEEE/ACM International Symposium on Low Power Electronics and Design
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509060238
DOIs
Publication statusPublished - 2017 Aug 11
Event22nd IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2017 - Taipei, Taiwan
Duration: 2017 Jul 242017 Jul 26

Publication series

NameProceedings of the International Symposium on Low Power Electronics and Design
ISSN (Print)1533-4678

Other

Other22nd IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2017
CountryTaiwan
CityTaipei
Period17-07-2417-07-26

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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