X-ray absorption spectroscopy study of annealing effect on co-implanted ZnO epitaxial films

Y. F. Liao; T. W. Huang; J. C.A. Huang; C. H. Lee

doi:10.1109/TMAG.2009.2018598

X-ray absorption spectroscopy study of annealing effect on co-implanted ZnO epitaxial films

Y. F. Liao, T. W. Huang, J. C.A. Huang, C. H. Lee

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Room temperature diluted ferromagnetic semiconductor is a very promising candidate for spintronics applications. In this work, we present the cobalt ion implanted ZnO epitaxial thin film under controlled annealing temperature to investigate the origin of ferromagnetism in this system. For the as-implanted sample a metallic cobalt cluster was observed. After annealing at 700°C, the Co atoms were to substitute the Zn sites of the ZnO matrix and exhibited a spontaneous room temperature ferromagnetism. However the XMCD measurements on the annealed samples show the cobalt element is almost paramagnetism at 26 K. The result might indicate oxygen vacancies caused ferromagnetism of intrinsic dilute magnetic semiconductors in the sample of the Co-implanted ZnO.

Original language	English
Article number	4957814
Pages (from-to)	2431-2434
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	45
Issue number	6
DOIs	https://doi.org/10.1109/TMAG.2009.2018598
Publication status	Published - 2009 Jun

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2009.2018598

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title = "X-ray absorption spectroscopy study of annealing effect on co-implanted ZnO epitaxial films",

abstract = "Room temperature diluted ferromagnetic semiconductor is a very promising candidate for spintronics applications. In this work, we present the cobalt ion implanted ZnO epitaxial thin film under controlled annealing temperature to investigate the origin of ferromagnetism in this system. For the as-implanted sample a metallic cobalt cluster was observed. After annealing at 700°C, the Co atoms were to substitute the Zn sites of the ZnO matrix and exhibited a spontaneous room temperature ferromagnetism. However the XMCD measurements on the annealed samples show the cobalt element is almost paramagnetism at 26 K. The result might indicate oxygen vacancies caused ferromagnetism of intrinsic dilute magnetic semiconductors in the sample of the Co-implanted ZnO.",

author = "Liao, {Y. F.} and Huang, {T. W.} and Huang, {J. C.A.} and Lee, {C. H.}",

note = "Funding Information: The author would like to thank the NSRRC for the support for the synchrotron beamtime. This work was supported by the National Science Council of the Republic of China under Contracts NSC93-2112-M007-017 and NSC97-2112-M007-019.",

year = "2009",

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doi = "10.1109/TMAG.2009.2018598",

language = "English",

volume = "45",

pages = "2431--2434",

journal = "IEEE Transactions on Magnetics",

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AU - Liao, Y. F.

AU - Huang, T. W.

AU - Huang, J. C.A.

AU - Lee, C. H.

N1 - Funding Information: The author would like to thank the NSRRC for the support for the synchrotron beamtime. This work was supported by the National Science Council of the Republic of China under Contracts NSC93-2112-M007-017 and NSC97-2112-M007-019.

PY - 2009/6

Y1 - 2009/6

N2 - Room temperature diluted ferromagnetic semiconductor is a very promising candidate for spintronics applications. In this work, we present the cobalt ion implanted ZnO epitaxial thin film under controlled annealing temperature to investigate the origin of ferromagnetism in this system. For the as-implanted sample a metallic cobalt cluster was observed. After annealing at 700°C, the Co atoms were to substitute the Zn sites of the ZnO matrix and exhibited a spontaneous room temperature ferromagnetism. However the XMCD measurements on the annealed samples show the cobalt element is almost paramagnetism at 26 K. The result might indicate oxygen vacancies caused ferromagnetism of intrinsic dilute magnetic semiconductors in the sample of the Co-implanted ZnO.

AB - Room temperature diluted ferromagnetic semiconductor is a very promising candidate for spintronics applications. In this work, we present the cobalt ion implanted ZnO epitaxial thin film under controlled annealing temperature to investigate the origin of ferromagnetism in this system. For the as-implanted sample a metallic cobalt cluster was observed. After annealing at 700°C, the Co atoms were to substitute the Zn sites of the ZnO matrix and exhibited a spontaneous room temperature ferromagnetism. However the XMCD measurements on the annealed samples show the cobalt element is almost paramagnetism at 26 K. The result might indicate oxygen vacancies caused ferromagnetism of intrinsic dilute magnetic semiconductors in the sample of the Co-implanted ZnO.

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X-ray absorption spectroscopy study of annealing effect on co-implanted ZnO epitaxial films

Abstract

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