X-ray photoelectron spectroscopy study of (NH4)2Sx-treated Mg-doped GaN layers

Yow Jon Lin; Chang Da Tsai; Yen Tang Lyu; Ching Ting Lee

doi:10.1063/1.127086

X-ray photoelectron spectroscopy study of (NH₄)₂S_x-treated Mg-doped GaN layers

Yow Jon Lin, Chang Da Tsai, Yen Tang Lyu, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

We present here the passivation mechanism and the chemistry of an (NH₄)₂S_x-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH₄)₂S_x treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies.

Original language	English
Pages (from-to)	687-689
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	5
DOIs	https://doi.org/10.1063/1.127086
Publication status	Published - 2000 Jul 31

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.127086

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abstract = "We present here the passivation mechanism and the chemistry of an (NH4)2Sx-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH4)2Sx treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies.",

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AU - Lin, Yow Jon

AU - Tsai, Chang Da

AU - Lyu, Yen Tang

AU - Lee, Ching Ting

PY - 2000/7/31

Y1 - 2000/7/31

N2 - We present here the passivation mechanism and the chemistry of an (NH4)2Sx-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH4)2Sx treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies.

AB - We present here the passivation mechanism and the chemistry of an (NH4)2Sx-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH4)2Sx treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies.

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X-ray photoelectron spectroscopy study of (NH₄)₂S_x-treated Mg-doped GaN layers

Abstract

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