X-ray reflectivity and surface energy analyses of the physical and electrical properties of α-IGZO/GZO double active layer thin film transistors

Jia Ling Wu, Han Yu Lin, Bo Yuan Su, Yu Cheng Chen, Sheng Yuan Chu, Ssu Yin Liu, Chia Chiang Chang, Chin Jyi Wu

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

In this research, bottom-gate thin film transistors (TFTs) of amorphous indium gallium zinc oxide (α-IGZO)-based active layers were grown by the radio-frequency sputtering technique. The device characteristics of two kinds of TFT structures, namely α-IGZO/GZO double active layer TFT and α-IGZO single active layer TFT, were compared. To explain the differences in the TFT performances of these different structures, X-ray reflectivity (XRR) and contact angles of the active layer were measured. The α-IGZO/GZO double active layer TFT exhibits superior device performance as compared to the other TFT structure because of its highest thin film density (5.87 g/cm 3), lowest surface roughness (1.89 nm), and largest surface energy (60.07 mJ/m2). Also, the mechanisms of this double active layer to improve the device characteristics were systematically investigated. The improved saturation mobility, sub-threshold voltage, on/off current ratio, and trap density of the α-IGZO/GZO double active layer TFT were 18.92 cm 2 V-1 S-1, 0.33 V/decade, 1.33×10 8, and 4.25×1012 eV-1 cm-2, respectively, indicating the potential of this structure to be applied on large-area-flat-panel displays.

Original languageEnglish
Pages (from-to)2419-2425
Number of pages7
JournalCeramics International
Volume40
Issue number1 PART B
DOIs
Publication statusPublished - 2014 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

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