Yttrium Aluminum Garnet Phosphor, Method of Preparing the Same and Light-Emitting Diode Device Containing the Same

In-Gann Chen (Inventor)

Research output: Patent

Abstract

The present invention relates to yttrium aluminum garnet phosphor, a method of preparing the same and a light-emitting diode containing the same. The yttrium aluminum garnet phosphor of the present invention is represented by the following formula (I):(Y3-aMa)Al5-bSibO12??(I)wherein, 0.01
Original languageEnglish
Patent number9085733
Publication statusPublished - 2013 Jun 13

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