Yttrium Aluminum Garnet Phosphor, Method of Preparing the Same and Light-Emitting Diode Device Containing the Same

In-Gann Chen (Inventor)

Research output: Patent

Abstract

The present invention relates to yttrium aluminum garnet phosphor, a method of preparing the same and a light-emitting diode containing the same. The yttrium aluminum garnet phosphor of the present invention is represented by the following formula (I):(Y3-aMa)Al5-bSibO12??(I)wherein, 0.01
Translated title of the contribution釔鋁石榴石螢光材料、其製作方法、及包含其之發光二極體裝置
Original languageEnglish
Patent number9085733
Publication statusPublished - 2013 Jun 13

Fingerprint

Dive into the research topics of 'Yttrium Aluminum Garnet Phosphor, Method of Preparing the Same and Light-Emitting Diode Device Containing the Same'. Together they form a unique fingerprint.

Cite this