Zinc oxide nanowire based field emitters

Sivakumar Ramanathan; Yu Chun Chen; Yonhua Tzeng

doi:10.1016/j.physe.2010.07.072

Zinc oxide nanowire based field emitters

Sivakumar Ramanathan
, Yu Chun Chen
, Yonhua Tzeng

Master Degree Program on Nano-Integrated-Circuit Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We report the field emission properties of 50 nm diameter ZnO nanowires that were electrochemically self-assembled within pores of an anodic alumina film. Current versus voltage measurements of the FowlerNordheim tunneling current indicate that the turn-on field is 15 V μm^-1 and the field enhancement factor β calculated for two sets of samples turned out to be 670 and 1481, respectively (theoretical value for β in bulk ZnO is 205). The enhancement in β is most likely due to the large aspect ratio of the nanowires. Variation in the length of the nanowires causes the screening effect, which increases the turn-on field and reduces the emission current density. The currentvoltage characteristics of the wires are non-linear and show a rectifying behavior.

Original language	English
Pages (from-to)	285-288
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	43
Issue number	1
DOIs	https://doi.org/10.1016/j.physe.2010.07.072
Publication status	Published - 2010 Nov

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2010.07.072

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abstract = "We report the field emission properties of 50 nm diameter ZnO nanowires that were electrochemically self-assembled within pores of an anodic alumina film. Current versus voltage measurements of the FowlerNordheim tunneling current indicate that the turn-on field is 15 V μm-1 and the field enhancement factor β calculated for two sets of samples turned out to be 670 and 1481, respectively (theoretical value for β in bulk ZnO is 205). The enhancement in β is most likely due to the large aspect ratio of the nanowires. Variation in the length of the nanowires causes the screening effect, which increases the turn-on field and reduces the emission current density. The currentvoltage characteristics of the wires are non-linear and show a rectifying behavior.",

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T1 - Zinc oxide nanowire based field emitters

AU - Ramanathan, Sivakumar

AU - Chen, Yu Chun

AU - Tzeng, Yonhua

PY - 2010/11

Y1 - 2010/11

N2 - We report the field emission properties of 50 nm diameter ZnO nanowires that were electrochemically self-assembled within pores of an anodic alumina film. Current versus voltage measurements of the FowlerNordheim tunneling current indicate that the turn-on field is 15 V μm-1 and the field enhancement factor β calculated for two sets of samples turned out to be 670 and 1481, respectively (theoretical value for β in bulk ZnO is 205). The enhancement in β is most likely due to the large aspect ratio of the nanowires. Variation in the length of the nanowires causes the screening effect, which increases the turn-on field and reduces the emission current density. The currentvoltage characteristics of the wires are non-linear and show a rectifying behavior.

AB - We report the field emission properties of 50 nm diameter ZnO nanowires that were electrochemically self-assembled within pores of an anodic alumina film. Current versus voltage measurements of the FowlerNordheim tunneling current indicate that the turn-on field is 15 V μm-1 and the field enhancement factor β calculated for two sets of samples turned out to be 670 and 1481, respectively (theoretical value for β in bulk ZnO is 205). The enhancement in β is most likely due to the large aspect ratio of the nanowires. Variation in the length of the nanowires causes the screening effect, which increases the turn-on field and reduces the emission current density. The currentvoltage characteristics of the wires are non-linear and show a rectifying behavior.

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M3 - Article

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JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1

ER -

Zinc oxide nanowire based field emitters

Abstract

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