Zinc oxide thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method

Huang Chung Cheng, Po Yu Yang, Jyh Liang Wang, Sanjay Agarwal, Wei Chih Tsai, Shui Jinn Wang, I. Che Lee

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

High-performance zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) with a single vertical grain boundary in the channel have been successfully fabricated by a novel low-temperature (i.e., 85 °C) hydrothermal method. The ZnO active channel was laterally grown with an aluminum-doped ZnO seed layer underneath the Ti/Pt film. Consequently, such BG-TFTs (W/L = 250 μm/10 μm) demonstrated the high field-effect mobility of 9.07 cm2/V ċ s, low threshold voltage of 2.25 V, high on/off-current ratio above 106, superior current drivability, indistinct hysteresis phenomenon, and small standard deviations among devices, attributed to the high-quality ZnO channel with the single grain boundary.

Original languageEnglish
Article number5713228
Pages (from-to)497-499
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number4
DOIs
Publication statusPublished - 2011 Apr 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Zinc oxide thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method'. Together they form a unique fingerprint.

Cite this