Zinc oxide thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method

Huang Chung Cheng; Po Yu Yang; Jyh Liang Wang; Sanjay Agarwal; Wei Chih Tsai; Shui Jinn Wang; I. Che Lee

doi:10.1109/LED.2010.2103921

Zinc oxide thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method

Huang Chung Cheng, Po Yu Yang, Jyh Liang Wang, Sanjay Agarwal, Wei Chih Tsai, Shui Jinn Wang, I. Che Lee

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

High-performance zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) with a single vertical grain boundary in the channel have been successfully fabricated by a novel low-temperature (i.e., 85 °C) hydrothermal method. The ZnO active channel was laterally grown with an aluminum-doped ZnO seed layer underneath the Ti/Pt film. Consequently, such BG-TFTs (W/L = 250 μm/10 μm) demonstrated the high field-effect mobility of 9.07 cm²/V ċ s, low threshold voltage of 2.25 V, high on/off-current ratio above 10⁶, superior current drivability, indistinct hysteresis phenomenon, and small standard deviations among devices, attributed to the high-quality ZnO channel with the single grain boundary.

Original language	English
Article number	5713228
Pages (from-to)	497-499
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	4
DOIs	https://doi.org/10.1109/LED.2010.2103921
Publication status	Published - 2011 Apr 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{2e96366c4356455bb24ee1755991f809,

title = "Zinc oxide thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method",

abstract = "High-performance zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) with a single vertical grain boundary in the channel have been successfully fabricated by a novel low-temperature (i.e., 85 °C) hydrothermal method. The ZnO active channel was laterally grown with an aluminum-doped ZnO seed layer underneath the Ti/Pt film. Consequently, such BG-TFTs (W/L = 250 μm/10 μm) demonstrated the high field-effect mobility of 9.07 cm2/V ċ s, low threshold voltage of 2.25 V, high on/off-current ratio above 106, superior current drivability, indistinct hysteresis phenomenon, and small standard deviations among devices, attributed to the high-quality ZnO channel with the single grain boundary.",

author = "Cheng, {Huang Chung} and Yang, {Po Yu} and Wang, {Jyh Liang} and Sanjay Agarwal and Tsai, {Wei Chih} and Wang, {Shui Jinn} and Lee, {I. Che}",

year = "2011",

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doi = "10.1109/LED.2010.2103921",

language = "English",

volume = "32",

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journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Zinc oxide thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method. / Cheng, Huang Chung; Yang, Po Yu; Wang, Jyh Liang; Agarwal, Sanjay; Tsai, Wei Chih; Wang, Shui Jinn; Lee, I. Che.

In: IEEE Electron Device Letters, Vol. 32, No. 4, 5713228, 01.04.2011, p. 497-499.

Research output: Contribution to journal › Article › peer-review

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AU - Cheng, Huang Chung

AU - Yang, Po Yu

AU - Wang, Jyh Liang

AU - Agarwal, Sanjay

AU - Tsai, Wei Chih

AU - Wang, Shui Jinn

AU - Lee, I. Che

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AB - High-performance zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) with a single vertical grain boundary in the channel have been successfully fabricated by a novel low-temperature (i.e., 85 °C) hydrothermal method. The ZnO active channel was laterally grown with an aluminum-doped ZnO seed layer underneath the Ti/Pt film. Consequently, such BG-TFTs (W/L = 250 μm/10 μm) demonstrated the high field-effect mobility of 9.07 cm2/V ċ s, low threshold voltage of 2.25 V, high on/off-current ratio above 106, superior current drivability, indistinct hysteresis phenomenon, and small standard deviations among devices, attributed to the high-quality ZnO channel with the single grain boundary.

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