TY - JOUR
T1 - Zinc oxide thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method
AU - Cheng, Huang Chung
AU - Yang, Po Yu
AU - Wang, Jyh Liang
AU - Agarwal, Sanjay
AU - Tsai, Wei Chih
AU - Wang, Shui Jinn
AU - Lee, I. Che
N1 - Funding Information:
Manuscript received November 30, 2010; accepted December 23, 2010. Date of publication February 14, 2011; date of current version March 23, 2011. This work was supported by the National Science Council of Taiwan under Contract NSC 99-2221-E-009-168-MY3. The review of this letter was arranged by Editor A. Nathan. H.-C. Cheng, P.-Y. Yang, and I.-C. Lee are with the Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan (e-mail: youngboy.ee96g@g2.nctu.edu.tw). J.-L. Wang is with the Department of Electronics Engineering, Ming Chi University of Technology, Taipei 243, Taiwan. S. Agarwal is with the Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan. W.-C. Tsai is with the Department of Electronic Engineering, National Formosa University, Huwei 632, Taiwan. S.-J. Wang is with the Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2010.2103921
PY - 2011/4
Y1 - 2011/4
N2 - High-performance zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) with a single vertical grain boundary in the channel have been successfully fabricated by a novel low-temperature (i.e., 85 °C) hydrothermal method. The ZnO active channel was laterally grown with an aluminum-doped ZnO seed layer underneath the Ti/Pt film. Consequently, such BG-TFTs (W/L = 250 μm/10 μm) demonstrated the high field-effect mobility of 9.07 cm2/V ċ s, low threshold voltage of 2.25 V, high on/off-current ratio above 106, superior current drivability, indistinct hysteresis phenomenon, and small standard deviations among devices, attributed to the high-quality ZnO channel with the single grain boundary.
AB - High-performance zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) with a single vertical grain boundary in the channel have been successfully fabricated by a novel low-temperature (i.e., 85 °C) hydrothermal method. The ZnO active channel was laterally grown with an aluminum-doped ZnO seed layer underneath the Ti/Pt film. Consequently, such BG-TFTs (W/L = 250 μm/10 μm) demonstrated the high field-effect mobility of 9.07 cm2/V ċ s, low threshold voltage of 2.25 V, high on/off-current ratio above 106, superior current drivability, indistinct hysteresis phenomenon, and small standard deviations among devices, attributed to the high-quality ZnO channel with the single grain boundary.
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U2 - 10.1109/LED.2010.2103921
DO - 10.1109/LED.2010.2103921
M3 - Article
AN - SCOPUS:79953052801
VL - 32
SP - 497
EP - 499
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 4
M1 - 5713228
ER -