ZnCdSe nanowires grown by molecular beam epitaxy

B. W. Lan, C. H. Hsiao, S. C. Hung, S. J. Chang, S. J. Young, Y. C. Cheng, S. H. Chih, B. R. Huang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


The authors report the growth of high density ternary Zn1-x Cdx Se (x=0.1,0.3) nanowires on an oxidized Si(100) substrate by molecular beam epitaxy and the fabrication of ZnCdSe nanowire photodetectors. It was found that the as-grown ZnCdSe nanowires exhibited mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that the average diameters for the Zn0.9 Cd0.1 Se and Zn 0.7 Cd0.3 Se nanowires were 36.0 and 70.6 nm, respectively, while the average lengths of Zn0.9 Cd0.1 Se and Zn0.7 Cd0.3 Se nanowires were both around 1 μm. Furthermore, it was found that the turn-on and turn-off time constants of the fabricated photodetectors were both less than 3 s.

Original languageEnglish
Pages (from-to)613-616
Number of pages4
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Issue number3
Publication statusPublished - 2010 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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