@article{1dd665ca62574e12b2be93dd61bd864f,
title = "ZnCdSeTe-based orange light-emitting diode",
abstract = "We report the fabrication of orange light-emitting diodes (LEDs) by introducing Te into the well layers of ZnCdSe-ZnSSe multiple quantum-well active region. It was found that a 15% Te can result in a 91-nm photoluminescence (PL) red-shift at 16 K and a 81-nm PL red-shift at room temperature. Such a ZnSe-based orange LED can be integrated easily with conventional ZnSe-based blue-green LED on the same GaAs substrate. Thus, such a ZnSe-based orange LED is potentially useful in realizing a new one-chip type white LED without the use of phosphor.",
author = "Chen, {W. R.} and Chang, {S. J.} and Su, {Y. K.} and Chen, {J. F.} and Lan, {W. H.} and Lin, {W. J.} and Cherng, {Y. T.} and Liu, {C. H.} and Liaw, {U. H.}",
note = "Funding Information: Manuscript received November 16, 2001; revised April 2, 2002. This work was supported in part by National Science Council, R.O.C. under Contract NSC-88-2215-E-006-005. W. R. Chen, S. J. Chang, and Y. K. Su are with the Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Taiwan 70101, R.O.C. W. H. Lan, W. J. Lin, and Y. T. Cherng are with the Chung Shan Institute of Science and Technology, Taiwan 325, R.O.C. C. H. Liu is with the Department of Electronic Engineering, Nan-Jeon Institute of Technology, Taiwan 737, ROC. U. H. Liaw is with the Department of Electronic Engineering, Chin-Min College, Taiwan 351, R.O.C. Publisher Item Identifier S 1041-1135(02)06028-7.",
year = "2002",
month = aug,
doi = "10.1109/LPT.2002.1021969",
language = "English",
volume = "14",
pages = "1061--1063",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",
}