ZnCdSeTe-based orange light-emitting diode

W. R. Chen, S. J. Chang, Y. K. Su, J. F. Chen, W. H. Lan, W. J. Lin, Y. T. Cherng, C. H. Liu, U. H. Liaw

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


We report the fabrication of orange light-emitting diodes (LEDs) by introducing Te into the well layers of ZnCdSe-ZnSSe multiple quantum-well active region. It was found that a 15% Te can result in a 91-nm photoluminescence (PL) red-shift at 16 K and a 81-nm PL red-shift at room temperature. Such a ZnSe-based orange LED can be integrated easily with conventional ZnSe-based blue-green LED on the same GaAs substrate. Thus, such a ZnSe-based orange LED is potentially useful in realizing a new one-chip type white LED without the use of phosphor.

Original languageEnglish
Pages (from-to)1061-1063
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number8
Publication statusPublished - 2002 Aug

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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