ZnMgSSe metal-semiconductor-metal visible-blind photodetectors with transparent indium-tin-oxide contact electrodes

Shoou Jinn Chang; Yan Kuin Su; Wen Ray Chen; Jone F. Chen; Ming Hong Chen; Fuh Shyang Juang; Wen How Lan; Wen Jen Lin; Ya Tung Cherng; Chun Hsing Liu; Uang Heay Liaw

doi:10.1143/JJAP.41.L115

ZnMgSSe metal-semiconductor-metal visible-blind photodetectors with transparent indium-tin-oxide contact electrodes

Shoou Jinn Chang, Yan Kuin Su, Wen Ray Chen, Jone F. Chen, Ming Hong Chen, Fuh Shyang Juang, Wen How Lan, Wen Jen Lin, Ya Tung Cherng, Chun Hsing Liu, Uang Heay Liaw

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

For the first time, indium-tin-oxide (ITO) layers were deposited onto n-ZnMgSSe films by DC magnetron sputtering and ZnMgSSe metal-semiconductor-metal (MSM) photodetectors Were fabricated. The Schottky barrier height of ITO on n-ZnMgSSe was determined to be about 0.65 eV. It was also found that we could achieve a photocurrent-to-dark current contrast higher than four orders of magnitude by applying a 10 V reverse bias. We also found that the maximum photoresponsivity at 400 nm is 0.27 A/W under a 5 V reverse bias. Such a value corresponds to an external quantum efficiency of 41.5%.

Original language	English
Pages (from-to)	L115-L117
Journal	Japanese Journal of Applied Physics
Volume	41
Issue number	2 A
DOIs	https://doi.org/10.1143/JJAP.41.L115
Publication status	Published - 2002 Feb 1

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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10.1143/JJAP.41.L115

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title = "ZnMgSSe metal-semiconductor-metal visible-blind photodetectors with transparent indium-tin-oxide contact electrodes",

abstract = "For the first time, indium-tin-oxide (ITO) layers were deposited onto n-ZnMgSSe films by DC magnetron sputtering and ZnMgSSe metal-semiconductor-metal (MSM) photodetectors Were fabricated. The Schottky barrier height of ITO on n-ZnMgSSe was determined to be about 0.65 eV. It was also found that we could achieve a photocurrent-to-dark current contrast higher than four orders of magnitude by applying a 10 V reverse bias. We also found that the maximum photoresponsivity at 400 nm is 0.27 A/W under a 5 V reverse bias. Such a value corresponds to an external quantum efficiency of 41.5%.",

author = "Chang, {Shoou Jinn} and Su, {Yan Kuin} and Chen, {Wen Ray} and Chen, {Jone F.} and Chen, {Ming Hong} and Juang, {Fuh Shyang} and Lan, {Wen How} and Lin, {Wen Jen} and Cherng, {Ya Tung} and Liu, {Chun Hsing} and Liaw, {Uang Heay}",

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doi = "10.1143/JJAP.41.L115",

language = "English",

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journal = "Japanese Journal of Applied Physics",

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TY - JOUR

T1 - ZnMgSSe metal-semiconductor-metal visible-blind photodetectors with transparent indium-tin-oxide contact electrodes

AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

AU - Chen, Wen Ray

AU - Chen, Jone F.

AU - Chen, Ming Hong

AU - Juang, Fuh Shyang

AU - Lan, Wen How

AU - Lin, Wen Jen

AU - Cherng, Ya Tung

AU - Liu, Chun Hsing

AU - Liaw, Uang Heay

PY - 2002/2/1

Y1 - 2002/2/1

N2 - For the first time, indium-tin-oxide (ITO) layers were deposited onto n-ZnMgSSe films by DC magnetron sputtering and ZnMgSSe metal-semiconductor-metal (MSM) photodetectors Were fabricated. The Schottky barrier height of ITO on n-ZnMgSSe was determined to be about 0.65 eV. It was also found that we could achieve a photocurrent-to-dark current contrast higher than four orders of magnitude by applying a 10 V reverse bias. We also found that the maximum photoresponsivity at 400 nm is 0.27 A/W under a 5 V reverse bias. Such a value corresponds to an external quantum efficiency of 41.5%.

AB - For the first time, indium-tin-oxide (ITO) layers were deposited onto n-ZnMgSSe films by DC magnetron sputtering and ZnMgSSe metal-semiconductor-metal (MSM) photodetectors Were fabricated. The Schottky barrier height of ITO on n-ZnMgSSe was determined to be about 0.65 eV. It was also found that we could achieve a photocurrent-to-dark current contrast higher than four orders of magnitude by applying a 10 V reverse bias. We also found that the maximum photoresponsivity at 400 nm is 0.27 A/W under a 5 V reverse bias. Such a value corresponds to an external quantum efficiency of 41.5%.

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JF - Japanese Journal of Applied Physics

IS - 2 A

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ZnMgSSe metal-semiconductor-metal visible-blind photodetectors with transparent indium-tin-oxide contact electrodes

Abstract

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