ZnO-based MIS photodetectors (DOI:10.1016/j.sna.2007.06.006)

S. J. Young, L. W. Ji, S. J. Chang, S. H. Liang, K. T. Lam, T. H. Fang, K. J. Chen, X. L. Du, Q. K. Xue

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Abstract

We report the fabrication of ZnO-based metal-insulator-semiconductor (MIS) and metal-semiconductor-metal (MSM) photodetectors. With 5 V applied bias, it was found that photocurrent to dark current contrast ratios of the ZnO MSM and MIS photodetectors were 2.9 × 102 and 3.2 × 104, respectively. It was also found that measured responsivities were 0.089 and 0.0083 A/W for the ZnO MSM and MIS photodetectors, respectively, when the incident light wavelength was 370 nm. Furthermore, it was found that UV to visible rejection ratios for the fabricated ZnO MSM and MIS photodetectors were 2.4 × 102 and 3.8 × 103, respectively.

Original languageEnglish
Pages (from-to)225-229
Number of pages5
JournalSensors and Actuators, A: Physical
Volume141
Issue number1
DOIs
Publication statusPublished - 2008 Jan 15

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

Cite this

Young, S. J., Ji, L. W., Chang, S. J., Liang, S. H., Lam, K. T., Fang, T. H., Chen, K. J., Du, X. L., & Xue, Q. K. (2008). ZnO-based MIS photodetectors (DOI:10.1016/j.sna.2007.06.006). Sensors and Actuators, A: Physical, 141(1), 225-229. https://doi.org/10.1016/j.sna.2007.06.003