ZnO-based MIS photodetectors

S. J. Young; L. W. Ji; S. J. Chang; S. H. Liang; K. T. Lam; T. H. Fang; K. J. Chen; X. L. Du; Q. K. Xue

doi:10.1016/j.sna.2006.10.001

ZnO-based MIS photodetectors

S. J. Young
, L. W. Ji
, S. J. Chang
, S. H. Liang
, K. T. Lam
, T. H. Fang
, K. J. Chen
, X. L. Du
, Q. K. Xue

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

We report the fabrication of ZnO-based metal-insulator-semiconductor (MIS) and metal-semiconductor-metal (MSM) photodetectors. With 5 V applied bias, it was found that photocurrent to dark current contrast ratios of the ZnO MSM and MIS photodetectors were 2.9 × 10² and 3.2 × 10⁴, respectively. It was also found that measured responsivities were 0.089 and 0.0083 A/W for the ZnO MSM and MIS photodetectors, respectively, when the incident light wavelength was 370 nm. Furthermore, it was found that ultraviolet (UV) to visible rejection ratios for the fabricated ZnO MSM and MIS photodetectors were 2.4 × 10² and 3.8 × 10³, respectively.

Original language	English
Pages (from-to)	529-533
Number of pages	5
Journal	Sensors and Actuators, A: Physical
Volume	135
Issue number	2
DOIs	https://doi.org/10.1016/j.sna.2006.10.001
Publication status	Published - 2007 Apr 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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10.1016/j.sna.2006.10.001

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@article{148248baac2940739c49acc908d511e7,

title = "ZnO-based MIS photodetectors",

abstract = "We report the fabrication of ZnO-based metal-insulator-semiconductor (MIS) and metal-semiconductor-metal (MSM) photodetectors. With 5 V applied bias, it was found that photocurrent to dark current contrast ratios of the ZnO MSM and MIS photodetectors were 2.9 × 102 and 3.2 × 104, respectively. It was also found that measured responsivities were 0.089 and 0.0083 A/W for the ZnO MSM and MIS photodetectors, respectively, when the incident light wavelength was 370 nm. Furthermore, it was found that ultraviolet (UV) to visible rejection ratios for the fabricated ZnO MSM and MIS photodetectors were 2.4 × 102 and 3.8 × 103, respectively.",

author = "Young, \{S. J.\} and Ji, \{L. W.\} and Chang, \{S. J.\} and Liang, \{S. H.\} and Lam, \{K. T.\} and Fang, \{T. H.\} and Chen, \{K. J.\} and Du, \{X. L.\} and Xue, \{Q. K.\}",

note = "Funding Information: This work was supported by National Science Council under contract number NSC-94-2215-E-150-009. ",

year = "2007",

month = apr,

day = "15",

doi = "10.1016/j.sna.2006.10.001",

language = "English",

volume = "135",

pages = "529--533",

journal = "Sensors and Actuators, A: Physical",

issn = "0924-4247",

publisher = "Elsevier BV",

number = "2",

}

TY - JOUR

T1 - ZnO-based MIS photodetectors

AU - Young, S. J.

AU - Ji, L. W.

AU - Chang, S. J.

AU - Liang, S. H.

AU - Lam, K. T.

AU - Fang, T. H.

AU - Chen, K. J.

AU - Du, X. L.

AU - Xue, Q. K.

N1 - Funding Information: This work was supported by National Science Council under contract number NSC-94-2215-E-150-009.

PY - 2007/4/15

Y1 - 2007/4/15

N2 - We report the fabrication of ZnO-based metal-insulator-semiconductor (MIS) and metal-semiconductor-metal (MSM) photodetectors. With 5 V applied bias, it was found that photocurrent to dark current contrast ratios of the ZnO MSM and MIS photodetectors were 2.9 × 102 and 3.2 × 104, respectively. It was also found that measured responsivities were 0.089 and 0.0083 A/W for the ZnO MSM and MIS photodetectors, respectively, when the incident light wavelength was 370 nm. Furthermore, it was found that ultraviolet (UV) to visible rejection ratios for the fabricated ZnO MSM and MIS photodetectors were 2.4 × 102 and 3.8 × 103, respectively.

AB - We report the fabrication of ZnO-based metal-insulator-semiconductor (MIS) and metal-semiconductor-metal (MSM) photodetectors. With 5 V applied bias, it was found that photocurrent to dark current contrast ratios of the ZnO MSM and MIS photodetectors were 2.9 × 102 and 3.2 × 104, respectively. It was also found that measured responsivities were 0.089 and 0.0083 A/W for the ZnO MSM and MIS photodetectors, respectively, when the incident light wavelength was 370 nm. Furthermore, it was found that ultraviolet (UV) to visible rejection ratios for the fabricated ZnO MSM and MIS photodetectors were 2.4 × 102 and 3.8 × 103, respectively.

UR - https://www.scopus.com/pages/publications/34047150059

UR - https://www.scopus.com/pages/publications/34047150059#tab=citedBy

U2 - 10.1016/j.sna.2006.10.001

DO - 10.1016/j.sna.2006.10.001

M3 - Article

AN - SCOPUS:34047150059

SN - 0924-4247

VL - 135

SP - 529

EP - 533

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

IS - 2

ER -

ZnO-based MIS photodetectors

Abstract

All Science Journal Classification (ASJC) codes

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