ZnO-based resonant cavity enhanced metal-semiconductor-metal ultraviolet photodetectors

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

Employing the vapor cooling condensation system and the distributed Bragg reflectors (DBRs), an intrinsic zinc-oxide (i-ZnO) film and Fabry-Perot cavity were deposited and used as the structure of the ZnO-based resonant cavity enhanced metal-semiconductor-metal ultraviolet photodetectors (RCE MSM UV PDs). The reflection of the DBRs with 18.5 and 2.5 HfO2/SiO2 pairs at a wavelength of 305 nm was 98.9% and 33.7%, respectively. Owing to the RCE structure, the 50 nm-thick ZnO-based RCE MSM UV PDs exhibited a UV-visible ratio of 265, a photoresponsivity of 0.268 A/W, and a detectivity of 1.19 × 1010 cm Hz0.5 W-1 at a wavelength of 305 nm.

Original languageEnglish
Pages (from-to)223-226
Number of pages4
JournalSolid-State Electronics
Volume79
DOIs
Publication statusPublished - 2013 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'ZnO-based resonant cavity enhanced metal-semiconductor-metal ultraviolet photodetectors'. Together they form a unique fingerprint.

Cite this