ZnO-Based Solar Blind Ultraviolet-B Photodetectors Using MgZnO Absorption Layer

Ching Ting Lee; Tzu Shun Lin; Chia Hsun Chen

doi:10.1007/s11664-015-4068-y

ZnO-Based Solar Blind Ultraviolet-B Photodetectors Using MgZnO Absorption Layer

Ching Ting Lee
, Tzu Shun Lin
, Chia Hsun Chen

Department of Photonics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The heterostructured thin films of the solar blind p-ZnO:LiNO₃/i-MgZnO/n-MgZnO:In ultraviolet-B photodetectors were deposited at a low temperature using the vapor cooling condensation system. The photodetectors exhibited an absorption cut-off wavelength of 310 nm and did not response in the visible wavelength range. A low dark current of 20 pA and a high rejection ratio of 3.60 × 10³ were measured when a reverse bias voltage of −1 V was applied. The associated photoresponsivity of 0.2 A/W, the noise equivalent power of 9.50 × 10⁻¹² W and the specific detectivity of 3.16 × 10¹² cm Hz^1/2 W⁻¹ were obtained. Furthermore, the dominant noise originated from the flicker noise.

Original language	English
Pages (from-to)	4722-4725
Number of pages	4
Journal	Journal of Electronic Materials
Volume	44
Issue number	12
DOIs	https://doi.org/10.1007/s11664-015-4068-y
Publication status	Published - 2015 Oct 8

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-015-4068-y

Cite this

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title = "ZnO-Based Solar Blind Ultraviolet-B Photodetectors Using MgZnO Absorption Layer",

abstract = "The heterostructured thin films of the solar blind p-ZnO:LiNO3/i-MgZnO/n-MgZnO:In ultraviolet-B photodetectors were deposited at a low temperature using the vapor cooling condensation system. The photodetectors exhibited an absorption cut-off wavelength of 310 nm and did not response in the visible wavelength range. A low dark current of 20 pA and a high rejection ratio of 3.60 × 103 were measured when a reverse bias voltage of −1 V was applied. The associated photoresponsivity of 0.2 A/W, the noise equivalent power of 9.50 × 10−12 W and the specific detectivity of 3.16 × 1012 cm Hz1/2 W−1 were obtained. Furthermore, the dominant noise originated from the flicker noise.",

author = "Lee, \{Ching Ting\} and Lin, \{Tzu Shun\} and Chen, \{Chia Hsun\}",

note = "Publisher Copyright: {\textcopyright} 2015, The Minerals, Metals \& Materials Society.",

year = "2015",

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doi = "10.1007/s11664-015-4068-y",

language = "English",

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AU - Lee, Ching Ting

AU - Lin, Tzu Shun

AU - Chen, Chia Hsun

PY - 2015/10/8

Y1 - 2015/10/8

N2 - The heterostructured thin films of the solar blind p-ZnO:LiNO3/i-MgZnO/n-MgZnO:In ultraviolet-B photodetectors were deposited at a low temperature using the vapor cooling condensation system. The photodetectors exhibited an absorption cut-off wavelength of 310 nm and did not response in the visible wavelength range. A low dark current of 20 pA and a high rejection ratio of 3.60 × 103 were measured when a reverse bias voltage of −1 V was applied. The associated photoresponsivity of 0.2 A/W, the noise equivalent power of 9.50 × 10−12 W and the specific detectivity of 3.16 × 1012 cm Hz1/2 W−1 were obtained. Furthermore, the dominant noise originated from the flicker noise.

AB - The heterostructured thin films of the solar blind p-ZnO:LiNO3/i-MgZnO/n-MgZnO:In ultraviolet-B photodetectors were deposited at a low temperature using the vapor cooling condensation system. The photodetectors exhibited an absorption cut-off wavelength of 310 nm and did not response in the visible wavelength range. A low dark current of 20 pA and a high rejection ratio of 3.60 × 103 were measured when a reverse bias voltage of −1 V was applied. The associated photoresponsivity of 0.2 A/W, the noise equivalent power of 9.50 × 10−12 W and the specific detectivity of 3.16 × 1012 cm Hz1/2 W−1 were obtained. Furthermore, the dominant noise originated from the flicker noise.

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 12

ER -

ZnO-Based Solar Blind Ultraviolet-B Photodetectors Using MgZnO Absorption Layer

Abstract

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