ZnO-Based Solar Blind Ultraviolet-C Photodetectors Using SiZnO Absorption Layer

Ching Ting Lee; Tzu Shun Lin

doi:10.1109/LPT.2015.2398418

ZnO-Based Solar Blind Ultraviolet-C Photodetectors Using SiZnO Absorption Layer

Ching Ting Lee, Tzu Shun Lin

Department of Photonics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The p-ZnO:LiNO₃/i-SiZnO/n-ZnO:In (p-i-n) ZnO-based solar blind ultraviolet-C photodetectors were deposited by vapor cooling condensation system. In view of the high performances of the deposited ZnO-based films, the solar blind performance was resulted due to very low photoresponse in the visible (VIS) wavelength range. The ultraviolet (270 nm)/VIS (420 nm) rejection ratio of $1.01 × 10⁴ was obtained. The dominant noise was flicker noise. Furthermore, the photoresponsivity of 0.260 A/W, the noise equivalent power of 3.54 × 10^-12 W, and the specific detectivity of 2.67 × 10¹¹ cmHz^1/2/W were obtained, when the photodetectors operated at a reverse bias voltage of -5 V.

Original language	English
Article number	7029053
Pages (from-to)	864-866
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	27
Issue number	8
DOIs	https://doi.org/10.1109/LPT.2015.2398418
Publication status	Published - 2015 Apr 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2015.2398418

Cite this

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title = "ZnO-Based Solar Blind Ultraviolet-C Photodetectors Using SiZnO Absorption Layer",

abstract = "The p-ZnO:LiNO3/i-SiZnO/n-ZnO:In (p-i-n) ZnO-based solar blind ultraviolet-C photodetectors were deposited by vapor cooling condensation system. In view of the high performances of the deposited ZnO-based films, the solar blind performance was resulted due to very low photoresponse in the visible (VIS) wavelength range. The ultraviolet (270 nm)/VIS (420 nm) rejection ratio of $1.01 × 104 was obtained. The dominant noise was flicker noise. Furthermore, the photoresponsivity of 0.260 A/W, the noise equivalent power of 3.54 × 10-12 W, and the specific detectivity of 2.67 × 1011 cmHz1/2/W were obtained, when the photodetectors operated at a reverse bias voltage of -5 V.",

author = "Lee, {Ching Ting} and Lin, {Tzu Shun}",

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ZnO-Based Solar Blind Ultraviolet-C Photodetectors Using SiZnO Absorption Layer

Abstract

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