ZnO epitaxial layers grown on nitridated Si(1 0 0) substrate with HT-GaN/LT-ZnO double buffer

S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, C. F. Kuo, H. M. Chang, U. H. Liaw

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15 Citations (Scopus)

Abstract

ZnO epitaxial layers were successfully grown on nitridated Si(1 0 0) substrate with high-temperature (HT) GaN and low-temperature ZnO double buffer layers by molecular beam epitaxy. It was found that the HT-GaN buffer was crystalline with both hexagonal and cubic phases. It was also found that numerous cone-shaped nano-islands were formed on the ZnO epitaxial layers with density, average diameter and average height of 1.25×109 cm-2, 300 nm and 150 nm, respectively. X-ray diffraction and photoluminescence results both indicate that quality of our ZnO epitaxial layers was good.

Original languageEnglish
Pages (from-to)290-294
Number of pages5
JournalJournal of Crystal Growth
Volume310
Issue number2
DOIs
Publication statusPublished - 2008 Jan 15

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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