ZnO epitaxial layers grown on nitridated Si(1 0 0) substrate with HT-GaN/LT-ZnO double buffer

S. P. Chang; S. J. Chang; Y. Z. Chiou; C. Y. Lu; T. K. Lin; C. F. Kuo; H. M. Chang; U. H. Liaw

doi:10.1016/j.jcrysgro.2007.10.029

ZnO epitaxial layers grown on nitridated Si(1 0 0) substrate with HT-GaN/LT-ZnO double buffer

S. P. Chang
, S. J. Chang
, Y. Z. Chiou
, C. Y. Lu
, T. K. Lin
, C. F. Kuo
, H. M. Chang
, U. H. Liaw

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

ZnO epitaxial layers were successfully grown on nitridated Si(1 0 0) substrate with high-temperature (HT) GaN and low-temperature ZnO double buffer layers by molecular beam epitaxy. It was found that the HT-GaN buffer was crystalline with both hexagonal and cubic phases. It was also found that numerous cone-shaped nano-islands were formed on the ZnO epitaxial layers with density, average diameter and average height of 1.25×10⁹ cm^-2, 300 nm and 150 nm, respectively. X-ray diffraction and photoluminescence results both indicate that quality of our ZnO epitaxial layers was good.

Original language	English
Pages (from-to)	290-294
Number of pages	5
Journal	Journal of Crystal Growth
Volume	310
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2007.10.029
Publication status	Published - 2008 Jan 15

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2007.10.029

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title = "ZnO epitaxial layers grown on nitridated Si(1 0 0) substrate with HT-GaN/LT-ZnO double buffer",

abstract = "ZnO epitaxial layers were successfully grown on nitridated Si(1 0 0) substrate with high-temperature (HT) GaN and low-temperature ZnO double buffer layers by molecular beam epitaxy. It was found that the HT-GaN buffer was crystalline with both hexagonal and cubic phases. It was also found that numerous cone-shaped nano-islands were formed on the ZnO epitaxial layers with density, average diameter and average height of 1.25×109 cm-2, 300 nm and 150 nm, respectively. X-ray diffraction and photoluminescence results both indicate that quality of our ZnO epitaxial layers was good.",

author = "Chang, \{S. P.\} and Chang, \{S. J.\} and Chiou, \{Y. Z.\} and Lu, \{C. Y.\} and Lin, \{T. K.\} and Kuo, \{C. F.\} and Chang, \{H. M.\} and Liaw, \{U. H.\}",

year = "2008",

month = jan,

day = "15",

doi = "10.1016/j.jcrysgro.2007.10.029",

language = "English",

volume = "310",

pages = "290--294",

journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - ZnO epitaxial layers grown on nitridated Si(1 0 0) substrate with HT-GaN/LT-ZnO double buffer

AU - Chang, S. P.

AU - Chang, S. J.

AU - Chiou, Y. Z.

AU - Lu, C. Y.

AU - Lin, T. K.

AU - Kuo, C. F.

AU - Chang, H. M.

AU - Liaw, U. H.

PY - 2008/1/15

Y1 - 2008/1/15

N2 - ZnO epitaxial layers were successfully grown on nitridated Si(1 0 0) substrate with high-temperature (HT) GaN and low-temperature ZnO double buffer layers by molecular beam epitaxy. It was found that the HT-GaN buffer was crystalline with both hexagonal and cubic phases. It was also found that numerous cone-shaped nano-islands were formed on the ZnO epitaxial layers with density, average diameter and average height of 1.25×109 cm-2, 300 nm and 150 nm, respectively. X-ray diffraction and photoluminescence results both indicate that quality of our ZnO epitaxial layers was good.

AB - ZnO epitaxial layers were successfully grown on nitridated Si(1 0 0) substrate with high-temperature (HT) GaN and low-temperature ZnO double buffer layers by molecular beam epitaxy. It was found that the HT-GaN buffer was crystalline with both hexagonal and cubic phases. It was also found that numerous cone-shaped nano-islands were formed on the ZnO epitaxial layers with density, average diameter and average height of 1.25×109 cm-2, 300 nm and 150 nm, respectively. X-ray diffraction and photoluminescence results both indicate that quality of our ZnO epitaxial layers was good.

UR - https://www.scopus.com/pages/publications/37349076563

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DO - 10.1016/j.jcrysgro.2007.10.029

M3 - Article

AN - SCOPUS:37349076563

SN - 0022-0248

VL - 310

SP - 290

EP - 294

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2

ER -

ZnO epitaxial layers grown on nitridated Si(1 0 0) substrate with HT-GaN/LT-ZnO double buffer

Abstract

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