ZnO metal-semiconductor-metal ultraviolet photodetectors with Iridium contact electrodes

S. J. Young, L. W. Ji, S. J. Chang, Y. P. Chen, K. T. Lam, S. H. Liang, X. L. Du, Q. K. Xue, Y. S. Sun

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

ZnO epitaxial films were grown on sapphire (0001) substrates by using rf plasma-assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM) photodetectors with Iridium (Ir) electrodes were then fabricated. It was found that Schottky barrier heights at the non-annealed and 500°C-annealed Ir/ZnO interfaces were around 0.65 and 0.78eV, respectively. With an incident wavelength of 370nm and 1V applied bias, it was found that the maximum responsivities for the Ir/ZnO/Ir MSM photodetectors with and without thermal annealing were 0.18 and 0.13A/W, respectively. From transient response measurement, it was found that time constant τ of the fabricated photodetectors was 22ms. For a given bandwidth of 100Hz and 1V applied bias, we found that noise equivalent power and corresponding detectivity D* were 6×10-13 W and 1.18×1012 cm Hz0.5/W, respectively.

Original languageEnglish
Pages (from-to)135-139
Number of pages5
JournalIET Optoelectronics
Volume1
Issue number3
DOIs
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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