ZnO metal-semiconductor-metal ultraviolet photodiodes with Au contacts

S. J. Young, L. W. Ji, S. J. Chang, X. L. Du

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

ZnO epitaxial films were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy. AuZnOAu metal-semiconductor-metal ultraviolet photodiodes with various finger widths and pitches ranging from 10 to 30 μm were also fabricated. It was found that we achieved largest detector responsivity from the 10×10 photodiodes with 10 μm finger width and 10 μm pitch. It was also found that the responsivity increases with the applied bias. With an incident wavelength of 370 nm and 1 V applied bias, it was found that the responsivity for the 10×10 photodiode was 0.135 AW, which corresponds to a quantum efficiency of 44.9%. Furthermore, it was found that noise equivalent power and corresponding detectivity D* of the 10×10 photodiodes were 3.17× 10-13 W and 2.23× 1012 cm Hz0.5 W-1, respectively.

Original languageEnglish
Pages (from-to)H26-H29
JournalJournal of the Electrochemical Society
Volume154
Issue number1
DOIs
Publication statusPublished - 2007 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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