ZnO MSM photodetectors with Ru contact electrodes

T. K. Lin; S. J. Chang; Y. K. Su; B. R. Huang; M. Fujita; Y. Horikoshi

doi:10.1016/j.jcrysgro.2005.04.056

ZnO MSM photodetectors with Ru contact electrodes

T. K. Lin, S. J. Chang, Y. K. Su, B. R. Huang, M. Fujita, Y. Horikoshi

Research output: Contribution to journal › Article › peer-review

71 Citations (Scopus)

Abstract

ZnO epitaxial films were grown on sapphire substrates by molecular beam epitaxy. Schottky diodes and metal-semiconductor-metal (MSM) photodetectors with ruthenium (Ru) electrodes were also fabricated. It was found that Schottky barrier height at the Ru/ZnO interface was 0.76 eV. It was also found that we achieved a photocurrent to dark current contrast ratio of 225 from our ZnO MSM photodetectors. Furthermore, it was found that the time constant of our photodetectors was 13 ms with three-order decay exponential function.

Original language	English
Pages (from-to)	513-517
Number of pages	5
Journal	Journal of Crystal Growth
Volume	281
Issue number	2-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.04.056
Publication status	Published - 2005 Aug 1

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "ZnO MSM photodetectors with Ru contact electrodes",

abstract = "ZnO epitaxial films were grown on sapphire substrates by molecular beam epitaxy. Schottky diodes and metal-semiconductor-metal (MSM) photodetectors with ruthenium (Ru) electrodes were also fabricated. It was found that Schottky barrier height at the Ru/ZnO interface was 0.76 eV. It was also found that we achieved a photocurrent to dark current contrast ratio of 225 from our ZnO MSM photodetectors. Furthermore, it was found that the time constant of our photodetectors was 13 ms with three-order decay exponential function.",

author = "Lin, {T. K.} and Chang, {S. J.} and Su, {Y. K.} and Huang, {B. R.} and M. Fujita and Y. Horikoshi",

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T1 - ZnO MSM photodetectors with Ru contact electrodes

AU - Lin, T. K.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Huang, B. R.

AU - Fujita, M.

AU - Horikoshi, Y.

PY - 2005/8/1

Y1 - 2005/8/1

N2 - ZnO epitaxial films were grown on sapphire substrates by molecular beam epitaxy. Schottky diodes and metal-semiconductor-metal (MSM) photodetectors with ruthenium (Ru) electrodes were also fabricated. It was found that Schottky barrier height at the Ru/ZnO interface was 0.76 eV. It was also found that we achieved a photocurrent to dark current contrast ratio of 225 from our ZnO MSM photodetectors. Furthermore, it was found that the time constant of our photodetectors was 13 ms with three-order decay exponential function.

AB - ZnO epitaxial films were grown on sapphire substrates by molecular beam epitaxy. Schottky diodes and metal-semiconductor-metal (MSM) photodetectors with ruthenium (Ru) electrodes were also fabricated. It was found that Schottky barrier height at the Ru/ZnO interface was 0.76 eV. It was also found that we achieved a photocurrent to dark current contrast ratio of 225 from our ZnO MSM photodetectors. Furthermore, it was found that the time constant of our photodetectors was 13 ms with three-order decay exponential function.

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JF - Journal of Crystal Growth

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