ZnO MSM photodetectors with Ru contact electrodes

T. K. Lin, S. J. Chang, Y. K. Su, B. R. Huang, M. Fujita, Y. Horikoshi

Research output: Contribution to journalArticlepeer-review

71 Citations (Scopus)

Abstract

ZnO epitaxial films were grown on sapphire substrates by molecular beam epitaxy. Schottky diodes and metal-semiconductor-metal (MSM) photodetectors with ruthenium (Ru) electrodes were also fabricated. It was found that Schottky barrier height at the Ru/ZnO interface was 0.76 eV. It was also found that we achieved a photocurrent to dark current contrast ratio of 225 from our ZnO MSM photodetectors. Furthermore, it was found that the time constant of our photodetectors was 13 ms with three-order decay exponential function.

Original languageEnglish
Pages (from-to)513-517
Number of pages5
JournalJournal of Crystal Growth
Volume281
Issue number2-4
DOIs
Publication statusPublished - 2005 Aug 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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