Abstract
ZnO epitaxial films were grown on sapphire substrates by molecular beam epitaxy. Schottky diodes and metal-semiconductor-metal (MSM) photodetectors with ruthenium (Ru) electrodes were also fabricated. It was found that Schottky barrier height at the Ru/ZnO interface was 0.76 eV. It was also found that we achieved a photocurrent to dark current contrast ratio of 225 from our ZnO MSM photodetectors. Furthermore, it was found that the time constant of our photodetectors was 13 ms with three-order decay exponential function.
| Original language | English |
|---|---|
| Pages (from-to) | 513-517 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 281 |
| Issue number | 2-4 |
| DOIs | |
| Publication status | Published - 2005 Aug 1 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry