ZnO nanoneedles/ZnO:Al film stack as an anti-reflection layer for high efficiency triple junction solar cell

Tzung Han Wu, Ricky Wenkuei Chuang, Chun Yuan Huang, Chiao Yang Cheng, Chun Yen Huang, Yi Chieh Lin, Yan Kuin Su

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

In this study, we have grown the nano-structural ZnOZnO:Al film as anti-reflection coating layer on triple junction solar cells and subsequently characterized their performances. In spite of the superior electrical characteristics of ZnO:Al layer deposited by radio frequency sputtering, a large reflectance of ZnO:Al film on GaAs leads to reduction of incident light. With nano-structural ZnOZnO:Al antireflection coating layer implemented, the conversion efficiency of GaAs based triple junction solar cells have enhanced from 21 to 26.2 under AM 1.5 global illumination (100 mwcm 2) and it can be further improved up to 32 with 160-sun illumination.

Original languageEnglish
Pages (from-to)H208-H210
JournalElectrochemical and Solid-State Letters
Volume15
Issue number6
DOIs
Publication statusPublished - 2012

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'ZnO nanoneedles/ZnO:Al film stack as an anti-reflection layer for high efficiency triple junction solar cell'. Together they form a unique fingerprint.

Cite this