ZnO nanoneedles/ZnO:Al film stack as an anti-reflection layer for high efficiency triple junction solar cell

Tzung Han Wu; Ricky Wenkuei Chuang; Chun Yuan Huang; Chiao Yang Cheng; Chun Yen Huang; Yi Chieh Lin; Yan Kuin Su

doi:10.1149/2.031206esl

ZnO nanoneedles/ZnO:Al film stack as an anti-reflection layer for high efficiency triple junction solar cell

Tzung Han Wu, Ricky Wenkuei Chuang, Chun Yuan Huang, Chiao Yang Cheng, Chun Yen Huang, Yi Chieh Lin, Yan Kuin Su

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

In this study, we have grown the nano-structural ZnOZnO:Al film as anti-reflection coating layer on triple junction solar cells and subsequently characterized their performances. In spite of the superior electrical characteristics of ZnO:Al layer deposited by radio frequency sputtering, a large reflectance of ZnO:Al film on GaAs leads to reduction of incident light. With nano-structural ZnOZnO:Al antireflection coating layer implemented, the conversion efficiency of GaAs based triple junction solar cells have enhanced from 21 to 26.2 under AM 1.5 global illumination (100 mwcm ²) and it can be further improved up to 32 with 160-sun illumination.

Original language	English
Pages (from-to)	H208-H210
Journal	Electrochemical and Solid-State Letters
Volume	15
Issue number	6
DOIs	https://doi.org/10.1149/2.031206esl
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/2.031206esl

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title = "ZnO nanoneedles/ZnO:Al film stack as an anti-reflection layer for high efficiency triple junction solar cell",

abstract = "In this study, we have grown the nano-structural ZnOZnO:Al film as anti-reflection coating layer on triple junction solar cells and subsequently characterized their performances. In spite of the superior electrical characteristics of ZnO:Al layer deposited by radio frequency sputtering, a large reflectance of ZnO:Al film on GaAs leads to reduction of incident light. With nano-structural ZnOZnO:Al antireflection coating layer implemented, the conversion efficiency of GaAs based triple junction solar cells have enhanced from 21 to 26.2 under AM 1.5 global illumination (100 mwcm 2) and it can be further improved up to 32 with 160-sun illumination.",

author = "Wu, {Tzung Han} and Chuang, {Ricky Wenkuei} and Huang, {Chun Yuan} and Cheng, {Chiao Yang} and Huang, {Chun Yen} and Lin, {Yi Chieh} and Su, {Yan Kuin}",

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T1 - ZnO nanoneedles/ZnO:Al film stack as an anti-reflection layer for high efficiency triple junction solar cell

AU - Wu, Tzung Han

AU - Chuang, Ricky Wenkuei

AU - Huang, Chun Yuan

AU - Cheng, Chiao Yang

AU - Huang, Chun Yen

AU - Lin, Yi Chieh

AU - Su, Yan Kuin

PY - 2012

Y1 - 2012

N2 - In this study, we have grown the nano-structural ZnOZnO:Al film as anti-reflection coating layer on triple junction solar cells and subsequently characterized their performances. In spite of the superior electrical characteristics of ZnO:Al layer deposited by radio frequency sputtering, a large reflectance of ZnO:Al film on GaAs leads to reduction of incident light. With nano-structural ZnOZnO:Al antireflection coating layer implemented, the conversion efficiency of GaAs based triple junction solar cells have enhanced from 21 to 26.2 under AM 1.5 global illumination (100 mwcm 2) and it can be further improved up to 32 with 160-sun illumination.

AB - In this study, we have grown the nano-structural ZnOZnO:Al film as anti-reflection coating layer on triple junction solar cells and subsequently characterized their performances. In spite of the superior electrical characteristics of ZnO:Al layer deposited by radio frequency sputtering, a large reflectance of ZnO:Al film on GaAs leads to reduction of incident light. With nano-structural ZnOZnO:Al antireflection coating layer implemented, the conversion efficiency of GaAs based triple junction solar cells have enhanced from 21 to 26.2 under AM 1.5 global illumination (100 mwcm 2) and it can be further improved up to 32 with 160-sun illumination.

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ZnO nanoneedles/ZnO:Al film stack as an anti-reflection layer for high efficiency triple junction solar cell

Abstract

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