ZnO nanorod/p-GaN heterostructured light-emitting diodes passivated using photoelectrochemical method

Jheng Tai Yan; Ching Ting Lee

doi:10.1149/13377102

ZnO nanorod/p-GaN heterostructured light-emitting diodes passivated using photoelectrochemical method

Jheng Tai Yan, Ching Ting Lee

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

To fabricate the p-GaN/i-ZnO nanorod/n-ZnO nanorod (p-i-n) nanorod-heterosturctured light-emitting diodes (LEDs), i-ZnO and n-ZnO:In nanorod arrays were grown sequentially on a p-GaN layer. In order to passivate the non-radiatvie recombination centers at the nanorod sidewall, a thin Zn(OH)₂ layer was directly grown on the ZnO nanorod using a photoelectrochemical method. Electroluminescence emission at 386 nm was observed from the resultant LEDs. Furthermore, the light output intensity of the passivated nanorod-heterosturctured LEDs was much larger than that of the unpassivated nanorod-heterosturctured LEDs. The result demonstrated that Zn(OH)₂ directly grown on the ZnO nanorod sidewall could passivate the non-radiative recombination centers effectively.

Original language	English
Title of host publication	Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52
Pages	71-77
Number of pages	7
Volume	28
Edition	4
DOIs	https://doi.org/10.1149/13377102
Publication status	Published - 2010
Event	Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting - Vancouver, BC, Canada Duration: 2010 Apr 25 → 2010 Apr 30

Other

Other	Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting
Country	Canada
City	Vancouver, BC
Period	10-04-25 → 10-04-30

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1149/13377102

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@inproceedings{ce3f7a61c9974d24a4e91f2f9452e8a9,

title = "ZnO nanorod/p-GaN heterostructured light-emitting diodes passivated using photoelectrochemical method",

abstract = "To fabricate the p-GaN/i-ZnO nanorod/n-ZnO nanorod (p-i-n) nanorod-heterosturctured light-emitting diodes (LEDs), i-ZnO and n-ZnO:In nanorod arrays were grown sequentially on a p-GaN layer. In order to passivate the non-radiatvie recombination centers at the nanorod sidewall, a thin Zn(OH)2 layer was directly grown on the ZnO nanorod using a photoelectrochemical method. Electroluminescence emission at 386 nm was observed from the resultant LEDs. Furthermore, the light output intensity of the passivated nanorod-heterosturctured LEDs was much larger than that of the unpassivated nanorod-heterosturctured LEDs. The result demonstrated that Zn(OH)2 directly grown on the ZnO nanorod sidewall could passivate the non-radiative recombination centers effectively.",

author = "Yan, {Jheng Tai} and Lee, {Ching Ting}",

year = "2010",

doi = "10.1149/13377102",

language = "English",

isbn = "9781566777940",

volume = "28",

pages = "71--77",

booktitle = "Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52",

edition = "4",

note = "Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting ; Conference date: 25-04-2010 Through 30-04-2010",

}

Yan, JT & Lee, CT 2010, ZnO nanorod/p-GaN heterostructured light-emitting diodes passivated using photoelectrochemical method. in Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52. 4 edn, vol. 28, pp. 71-77, Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting, Vancouver, BC, Canada, 10-04-25. https://doi.org/10.1149/13377102

ZnO nanorod/p-GaN heterostructured light-emitting diodes passivated using photoelectrochemical method. / Yan, Jheng Tai; Lee, Ching Ting.

Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52. Vol. 28 4. ed. 2010. p. 71-77.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - ZnO nanorod/p-GaN heterostructured light-emitting diodes passivated using photoelectrochemical method

AU - Yan, Jheng Tai

AU - Lee, Ching Ting

PY - 2010

Y1 - 2010

N2 - To fabricate the p-GaN/i-ZnO nanorod/n-ZnO nanorod (p-i-n) nanorod-heterosturctured light-emitting diodes (LEDs), i-ZnO and n-ZnO:In nanorod arrays were grown sequentially on a p-GaN layer. In order to passivate the non-radiatvie recombination centers at the nanorod sidewall, a thin Zn(OH)2 layer was directly grown on the ZnO nanorod using a photoelectrochemical method. Electroluminescence emission at 386 nm was observed from the resultant LEDs. Furthermore, the light output intensity of the passivated nanorod-heterosturctured LEDs was much larger than that of the unpassivated nanorod-heterosturctured LEDs. The result demonstrated that Zn(OH)2 directly grown on the ZnO nanorod sidewall could passivate the non-radiative recombination centers effectively.

AB - To fabricate the p-GaN/i-ZnO nanorod/n-ZnO nanorod (p-i-n) nanorod-heterosturctured light-emitting diodes (LEDs), i-ZnO and n-ZnO:In nanorod arrays were grown sequentially on a p-GaN layer. In order to passivate the non-radiatvie recombination centers at the nanorod sidewall, a thin Zn(OH)2 layer was directly grown on the ZnO nanorod using a photoelectrochemical method. Electroluminescence emission at 386 nm was observed from the resultant LEDs. Furthermore, the light output intensity of the passivated nanorod-heterosturctured LEDs was much larger than that of the unpassivated nanorod-heterosturctured LEDs. The result demonstrated that Zn(OH)2 directly grown on the ZnO nanorod sidewall could passivate the non-radiative recombination centers effectively.

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M3 - Conference contribution

AN - SCOPUS:78650471117

SN - 9781566777940

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EP - 77

BT - Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52

T2 - Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting

Y2 - 25 April 2010 through 30 April 2010

ER -