@inproceedings{ce3f7a61c9974d24a4e91f2f9452e8a9,
title = "ZnO nanorod/p-GaN heterostructured light-emitting diodes passivated using photoelectrochemical method",
abstract = "To fabricate the p-GaN/i-ZnO nanorod/n-ZnO nanorod (p-i-n) nanorod-heterosturctured light-emitting diodes (LEDs), i-ZnO and n-ZnO:In nanorod arrays were grown sequentially on a p-GaN layer. In order to passivate the non-radiatvie recombination centers at the nanorod sidewall, a thin Zn(OH)2 layer was directly grown on the ZnO nanorod using a photoelectrochemical method. Electroluminescence emission at 386 nm was observed from the resultant LEDs. Furthermore, the light output intensity of the passivated nanorod-heterosturctured LEDs was much larger than that of the unpassivated nanorod-heterosturctured LEDs. The result demonstrated that Zn(OH)2 directly grown on the ZnO nanorod sidewall could passivate the non-radiative recombination centers effectively.",
author = "Yan, {Jheng Tai} and Lee, {Ching Ting}",
year = "2010",
doi = "10.1149/13377102",
language = "English",
isbn = "9781566777940",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "71--77",
booktitle = "Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52",
edition = "4",
}