Abstract
To fabricate the p-GaN/i-ZnO nanorod/n-ZnO nanorod (p-i-n) nanorod-heterosturctured light-emitting diodes (LEDs), i-ZnO and n-ZnO:In nanorod arrays were grown sequentially on a p-GaN layer. In order to passivate the non-radiatvie recombination centers at the nanorod sidewall, a thin Zn(OH)2 layer was directly grown on the ZnO nanorod using a photoelectrochemical method. Electroluminescence emission at 386 nm was observed from the resultant LEDs. Furthermore, the light output intensity of the passivated nanorod-heterosturctured LEDs was much larger than that of the unpassivated nanorod-heterosturctured LEDs. The result demonstrated that Zn(OH)2 directly grown on the ZnO nanorod sidewall could passivate the non-radiative recombination centers effectively.
Original language | English |
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Title of host publication | Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 |
Pages | 71-77 |
Number of pages | 7 |
Volume | 28 |
Edition | 4 |
DOIs | |
Publication status | Published - 2010 |
Event | Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting - Vancouver, BC, Canada Duration: 2010 Apr 25 → 2010 Apr 30 |
Other
Other | Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting |
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Country | Canada |
City | Vancouver, BC |
Period | 10-04-25 → 10-04-30 |
All Science Journal Classification (ASJC) codes
- Engineering(all)