ZnO-nanowire-based extended-gate field-effect-transistor pH sensors prepared on glass substrate

Sheng Po Chang, Chih Wei Li, Kuan Jen Chen, Shoou Jinn Chang, Cheng Liang Hsu, Ting Jen Hsueh, Han Ting Hsueh

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The sensing membrane of a extended-gate field-effect-transistor (EGFET) pH sensor, consisting of a zinc oxide (ZnO) thin film and a ZnO nanowire array, was fabricated using the Vapor-liquid-solid method. The EGFET pH sensor with ZnO nanowire array exhibited significantly improved sensing performance owing to a large sensing surface-to-volume ratio. The measured current and voltage sensitivities of the pH sensor were 48.6 μA/pH and 36.9 mV/pH, respectively, at pH values ranging from 4 to 10.

Original languageEnglish
Pages (from-to)1174-1178
Number of pages5
JournalScience of Advanced Materials
Volume4
Issue number11
DOIs
Publication statusPublished - 2012 Nov 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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