ZnO photoconductive sensors epitaxially grown on sapphire substrates

S. P. Chang, Shoou-Jinn Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Yu-Cheng Lin, C. F. Kuo, H. M. Chang

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

We report the fabrication of ZnO photoconductive sensors epitaxially grown on sapphire substrates with interdigitated Ni/Au electrodes. It was found that there exists an electric field-dependent photoconductive gain in the fabricated sensors. With an applied electric field of 500 V/cm, it was found that maximum quantum efficiency was around 2.8% while time constant of the decay transient was τ ∼ 0.556 ms.

Original languageEnglish
Pages (from-to)60-64
Number of pages5
JournalSensors and Actuators, A: Physical
Volume140
Issue number1
DOIs
Publication statusPublished - 2007 Oct 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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