ZnO Schottky diodes with iridium contact electrodes

S. J. Young; L. W. Ji; S. J. Chang; Y. P. Chen; S. M. Peng

doi:10.1088/0268-1242/23/8/085016

ZnO Schottky diodes with iridium contact electrodes

S. J. Young, L. W. Ji, S. J. Chang, Y. P. Chen, S. M. Peng

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Schottky diodes with iridium (Ir) contact electrodes on ZnO films were fabricated and characterized in this work. The Schottky barrier height between Ir and ZnO was determined to be 0.824 ± 0.04%, 0.837 ± 0.04% and 0.924 ± 0.04% eV by the thermionic emission model, the Norde model and capacitance-voltage measurement, respectively. It was also found that the ideality factor of the fabricated ZnO-based Schottky diode was 1.68.

Original language	English
Pages (from-to)	85016
Number of pages	1
Journal	Semiconductor Science and Technology
Volume	23
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/23/8/085016
Publication status	Published - 2008 Aug 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/23/8/085016

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abstract = "Schottky diodes with iridium (Ir) contact electrodes on ZnO films were fabricated and characterized in this work. The Schottky barrier height between Ir and ZnO was determined to be 0.824 ± 0.04%, 0.837 ± 0.04% and 0.924 ± 0.04% eV by the thermionic emission model, the Norde model and capacitance-voltage measurement, respectively. It was also found that the ideality factor of the fabricated ZnO-based Schottky diode was 1.68.",

author = "Young, {S. J.} and Ji, {L. W.} and Chang, {S. J.} and Chen, {Y. P.} and Peng, {S. M.}",

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T1 - ZnO Schottky diodes with iridium contact electrodes

AU - Young, S. J.

AU - Ji, L. W.

AU - Chang, S. J.

AU - Chen, Y. P.

AU - Peng, S. M.

PY - 2008/8/1

Y1 - 2008/8/1

N2 - Schottky diodes with iridium (Ir) contact electrodes on ZnO films were fabricated and characterized in this work. The Schottky barrier height between Ir and ZnO was determined to be 0.824 ± 0.04%, 0.837 ± 0.04% and 0.924 ± 0.04% eV by the thermionic emission model, the Norde model and capacitance-voltage measurement, respectively. It was also found that the ideality factor of the fabricated ZnO-based Schottky diode was 1.68.

AB - Schottky diodes with iridium (Ir) contact electrodes on ZnO films were fabricated and characterized in this work. The Schottky barrier height between Ir and ZnO was determined to be 0.824 ± 0.04%, 0.837 ± 0.04% and 0.924 ± 0.04% eV by the thermionic emission model, the Norde model and capacitance-voltage measurement, respectively. It was also found that the ideality factor of the fabricated ZnO-based Schottky diode was 1.68.

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U2 - 10.1088/0268-1242/23/8/085016

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M3 - Article

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SN - 0268-1242

VL - 23

SP - 85016

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 8

ER -

ZnO Schottky diodes with iridium contact electrodes

Abstract

All Science Journal Classification (ASJC) codes

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