Schottky diodes with iridium (Ir) contact electrodes on ZnO films were fabricated and characterized in this work. The Schottky barrier height between Ir and ZnO was determined to be 0.824 ± 0.04%, 0.837 ± 0.04% and 0.924 ± 0.04% eV by the thermionic emission model, the Norde model and capacitance-voltage measurement, respectively. It was also found that the ideality factor of the fabricated ZnO-based Schottky diode was 1.68.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry