ZnO Schottky diodes with iridium contact electrodes

S. J. Young, L. W. Ji, S. J. Chang, Y. P. Chen, S. M. Peng

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

Schottky diodes with iridium (Ir) contact electrodes on ZnO films were fabricated and characterized in this work. The Schottky barrier height between Ir and ZnO was determined to be 0.824 ± 0.04%, 0.837 ± 0.04% and 0.924 ± 0.04% eV by the thermionic emission model, the Norde model and capacitance-voltage measurement, respectively. It was also found that the ideality factor of the fabricated ZnO-based Schottky diode was 1.68.

Original languageEnglish
Pages (from-to)85016
Number of pages1
JournalSemiconductor Science and Technology
Volume23
Issue number8
DOIs
Publication statusPublished - 2008 Aug 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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