ZnO-SiO2 solar-blind photodetectors on flexible polyethersulfone substrate with organosilicon buffer layer

Wei Chih Lai; Jiun Ting Chen; Ya Yu Yang

doi:10.1063/1.4807124

ZnO-SiO₂ solar-blind photodetectors on flexible polyethersulfone substrate with organosilicon buffer layer

Wei Chih Lai
, Jiun Ting Chen
, Ya Yu Yang

Department of Photonics

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The ZnO-SiO₂ nanocomposite solar-blind metal-semiconductor-metal photodetectors (PDs) on flexible polyethersulfone (PES) with an organosilicon (SiO_x(CH₃)) buffer layer improved the -10 V-biased responsivity of PDs illuminated wavelength of 240 nm from 0.75 A/W (without SiO_x(CH₃) buffer layer) to 3.86 A/W and the deep-ultraviolet (DUV)-visible rejection ratio of PDs from 8.10 × 10 ⁴ (without SiO_x(CH₃) buffer layer) to 1.75 × 10⁵. Moreover, the inserted SiO_x(CH₃) buffer layer would reduce the responsivity and DUV-visible rejection ratio of degradation of the severely bended ZnO-SiO₂ nanocomposite PDs on PES.

Original language	English
Article number	191115
Journal	Applied Physics Letters
Volume	102
Issue number	19
DOIs	https://doi.org/10.1063/1.4807124
Publication status	Published - 2013 May 13

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4807124

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title = "ZnO-SiO2 solar-blind photodetectors on flexible polyethersulfone substrate with organosilicon buffer layer",

abstract = "The ZnO-SiO2 nanocomposite solar-blind metal-semiconductor-metal photodetectors (PDs) on flexible polyethersulfone (PES) with an organosilicon (SiOx(CH3)) buffer layer improved the -10 V-biased responsivity of PDs illuminated wavelength of 240 nm from 0.75 A/W (without SiOx(CH3) buffer layer) to 3.86 A/W and the deep-ultraviolet (DUV)-visible rejection ratio of PDs from 8.10 × 10 4 (without SiOx(CH3) buffer layer) to 1.75 × 105. Moreover, the inserted SiOx(CH3) buffer layer would reduce the responsivity and DUV-visible rejection ratio of degradation of the severely bended ZnO-SiO2 nanocomposite PDs on PES.",

author = "Lai, \{Wei Chih\} and Chen, \{Jiun Ting\} and Yang, \{Ya Yu\}",

note = "Funding Information: The authors are deeply grateful to the National Science Council of Taiwan (Research Grant No. NSC101-2221-E-006-066-MY3) for their financial support. ",

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doi = "10.1063/1.4807124",

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AU - Lai, Wei Chih

AU - Chen, Jiun Ting

AU - Yang, Ya Yu

N1 - Funding Information: The authors are deeply grateful to the National Science Council of Taiwan (Research Grant No. NSC101-2221-E-006-066-MY3) for their financial support.

PY - 2013/5/13

Y1 - 2013/5/13

N2 - The ZnO-SiO2 nanocomposite solar-blind metal-semiconductor-metal photodetectors (PDs) on flexible polyethersulfone (PES) with an organosilicon (SiOx(CH3)) buffer layer improved the -10 V-biased responsivity of PDs illuminated wavelength of 240 nm from 0.75 A/W (without SiOx(CH3) buffer layer) to 3.86 A/W and the deep-ultraviolet (DUV)-visible rejection ratio of PDs from 8.10 × 10 4 (without SiOx(CH3) buffer layer) to 1.75 × 105. Moreover, the inserted SiOx(CH3) buffer layer would reduce the responsivity and DUV-visible rejection ratio of degradation of the severely bended ZnO-SiO2 nanocomposite PDs on PES.

AB - The ZnO-SiO2 nanocomposite solar-blind metal-semiconductor-metal photodetectors (PDs) on flexible polyethersulfone (PES) with an organosilicon (SiOx(CH3)) buffer layer improved the -10 V-biased responsivity of PDs illuminated wavelength of 240 nm from 0.75 A/W (without SiOx(CH3) buffer layer) to 3.86 A/W and the deep-ultraviolet (DUV)-visible rejection ratio of PDs from 8.10 × 10 4 (without SiOx(CH3) buffer layer) to 1.75 × 105. Moreover, the inserted SiOx(CH3) buffer layer would reduce the responsivity and DUV-visible rejection ratio of degradation of the severely bended ZnO-SiO2 nanocomposite PDs on PES.

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ZnO-SiO₂ solar-blind photodetectors on flexible polyethersulfone substrate with organosilicon buffer layer

Abstract

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