ZnO ultraviolet photodiodes with Pd contact electrodes

S. J. Young, L. W. Ji, T. H. Fang, S. J. Chang, Y. K. Su, X. L. Du

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59 Citations (Scopus)


ZnO epitaxial films were grown on sapphire (0 0 0 1) substrates by using RF plasma-assisted molecular beam epitaxy (MBE). Metal-semiconductor-metal (MSM) ZnO photodiodes with palladium contact electrodes were then fabricated. With an incident wavelength of 370 nm and an applied bias of 1 V, it was found that maximum responsivity of the Pd/ZnO/Pd MSM photodetectors was 0.051 A W-1, which corresponds to a quantum efficiency of 11.4%. Furthermore, it was found that the time constant of our photodiodes was 24 ms with a three-order decay exponential function. For a given bandwidth of 100 Hz and an applied bias of 1 V, we found that noise equivalent power and corresponding detectivity D* were 1.13 × 10-12 W and 6.25 × 1011 cm Hz0.5 W-1, respectively.

Original languageEnglish
Pages (from-to)329-333
Number of pages5
JournalActa Materialia
Issue number1
Publication statusPublished - 2007 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys


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