TY - GEN
T1 - ZnO:Al based transparent thin film transistors
AU - Lee, Ching Ting
AU - Shien, Wen Ming
AU - Lee, Hsin Ying
AU - Chou, Cheng Hsu
PY - 2008/12/1
Y1 - 2008/12/1
N2 - In this work, the transparent thin film transistors (TTFTs) with slightly Al-doped ZnO films as the channel layers were fabricated by a magnetron radio frequency co-sputtering system. The performances of the TTFTs with various thicknesses of the channel layers were characterized. When the thickness of the channel layer was 25 nm, the field-effect carrier mobility and the on/off current ratio of the TTFTs were as high as 32.5 cm2/V-s and 10 7, respectively. The DC characteristics of the ZnO:Al based TTFTs at different temperatures were also measured, showing a reasonable thermal stability.
AB - In this work, the transparent thin film transistors (TTFTs) with slightly Al-doped ZnO films as the channel layers were fabricated by a magnetron radio frequency co-sputtering system. The performances of the TTFTs with various thicknesses of the channel layers were characterized. When the thickness of the channel layer was 25 nm, the field-effect carrier mobility and the on/off current ratio of the TTFTs were as high as 32.5 cm2/V-s and 10 7, respectively. The DC characteristics of the ZnO:Al based TTFTs at different temperatures were also measured, showing a reasonable thermal stability.
UR - http://www.scopus.com/inward/record.url?scp=58049152989&partnerID=8YFLogxK
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U2 - 10.1109/LEOS.2008.4688490
DO - 10.1109/LEOS.2008.4688490
M3 - Conference contribution
AN - SCOPUS:58049152989
SN - 9781424419326
T3 - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
SP - 65
EP - 66
BT - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008
T2 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008
Y2 - 9 November 2008 through 13 November 2008
ER -