ZnO:Al based transparent thin film transistors

Ching Ting Lee, Wen Ming Shien, Hsin Ying Lee, Cheng Hsu Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this work, the transparent thin film transistors (TTFTs) with slightly Al-doped ZnO films as the channel layers were fabricated by a magnetron radio frequency co-sputtering system. The performances of the TTFTs with various thicknesses of the channel layers were characterized. When the thickness of the channel layer was 25 nm, the field-effect carrier mobility and the on/off current ratio of the TTFTs were as high as 32.5 cm2/V-s and 10 7, respectively. The DC characteristics of the ZnO:Al based TTFTs at different temperatures were also measured, showing a reasonable thermal stability.

Original languageEnglish
Title of host publication21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008
Pages65-66
Number of pages2
DOIs
Publication statusPublished - 2008 Dec 1
Event21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008 - Newport Beach, CA, United States
Duration: 2008 Nov 92008 Nov 13

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
ISSN (Print)1092-8081

Other

Other21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008
CountryUnited States
CityNewport Beach, CA
Period08-11-0908-11-13

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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