ZnO:Ga thin film with hydrogen and nitrogen post annealing and applications in transparent rram

Li Wen Wang, Chun Cheng Lin, Sheng Yuan Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this article is talking about Ga:ZnO(GZO) which is kind of transparent conductive oxide with non-toxic and stability. In order to reduce the resistance and improve the device performance, uses the nitrogen and hydrogen mixture furnace annealing as post treatment. Discuss about the GZO electrode with hydrogen post treatment.

Original languageEnglish
Title of host publication25th International Display Workshops, IDW 2018
PublisherInternational Display Workshops
Pages562-565
Number of pages4
ISBN (Electronic)9781510883918
Publication statusPublished - 2018 Jan 1
Event25th International Display Workshops, IDW 2018 - Nagoya, Japan
Duration: 2018 Dec 122018 Dec 14

Publication series

NameProceedings of the International Display Workshops
Volume2
ISSN (Print)1883-2490

Conference

Conference25th International Display Workshops, IDW 2018
CountryJapan
CityNagoya
Period18-12-1218-12-14

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All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

Cite this

Wang, L. W., Lin, C. C., & Chu, S. Y. (2018). ZnO:Ga thin film with hydrogen and nitrogen post annealing and applications in transparent rram. In 25th International Display Workshops, IDW 2018 (pp. 562-565). (Proceedings of the International Display Workshops; Vol. 2). International Display Workshops.