In this study, ZnSe epitaxial layers and ZnSSe/ZnSe strained layer superlattice (SLS) layers were grown on top of bare (100) GaAs substrates by molecular beam epitaxy (MBE). It was found that the migration enhanced epitaxy (MEE) process could significantly improve the crystal quality of the subsequently grown ZnSe epitaxial layers and ZnSSe/ZnSe SLS even with a high Se background partial pressure. It was found that the sulfur composition was 0.075, 0.088 and 0.12 for samples grown at 265, 255 and 235° C, respectively, which suggests that sulfur incorporation efficiency is higher at lower temperatures. It was also found that the crystal quality of the ZnSSe/ZnSe SLS layers, grown on top of the MEE ZnSe buffer layer, is reasonably good.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering