ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates

T. K. Lin; S. J. Chang; Y. K. Su; Y. Z. Chiou; C. K. Wang; S. P. Chang; C. M. Chang; J. J. Tang; B. R. Huang

doi:10.1016/j.mseb.2005.03.002

ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates

T. K. Lin
, S. J. Chang
, Y. K. Su
, Y. Z. Chiou
, C. K. Wang
, S. P. Chang
, C. M. Chang
, J. J. Tang
, B. R. Huang

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

Homoepitaxial and heteroepitaxial ZnSe metal-semiconductor-metal (MSM) photodetectors were both fabricated and characterized. It was found that homoepitaxial ZnSe MSM photodetector could provide us smaller dark current and large photocurrent. With an incident wavelength of 448 nm, it was found that the maximum responsivities for the homoepitaxial and heteroepitaxial ZnSe photodetectors were 0.128 and 0.045 A/W, which corresponds to a quantum efficiency of 36 and 12%, respectively. Furthermore, it was found that we achieved the minimum noise equivalent power (NEP) of 7.6 × 10 ^-13 W and the maximum normalized detectivity (D^*) of 9.3 × 10¹¹ cm Hz^0.5 W^-1 from our homoepitaxial ZnSe photodetector. In contrast, NEP and D^* of the heteroepitaxial ZnSe photodetector were 2.9 × 10^-12 W and 2.44 × 10¹¹ cm Hz^0.5 W^-1, respectively.

Original language	English
Pages (from-to)	202-205
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	119
Issue number	2
DOIs	https://doi.org/10.1016/j.mseb.2005.03.002
Publication status	Published - 2005 May 25

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2005.03.002

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title = "ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates",

abstract = "Homoepitaxial and heteroepitaxial ZnSe metal-semiconductor-metal (MSM) photodetectors were both fabricated and characterized. It was found that homoepitaxial ZnSe MSM photodetector could provide us smaller dark current and large photocurrent. With an incident wavelength of 448 nm, it was found that the maximum responsivities for the homoepitaxial and heteroepitaxial ZnSe photodetectors were 0.128 and 0.045 A/W, which corresponds to a quantum efficiency of 36 and 12\%, respectively. Furthermore, it was found that we achieved the minimum noise equivalent power (NEP) of 7.6 × 10 -13 W and the maximum normalized detectivity (D*) of 9.3 × 1011 cm Hz0.5 W-1 from our homoepitaxial ZnSe photodetector. In contrast, NEP and D* of the heteroepitaxial ZnSe photodetector were 2.9 × 10-12 W and 2.44 × 1011 cm Hz0.5 W-1, respectively.",

author = "Lin, \{T. K.\} and Chang, \{S. J.\} and Su, \{Y. K.\} and Chiou, \{Y. Z.\} and Wang, \{C. K.\} and Chang, \{S. P.\} and Chang, \{C. M.\} and Tang, \{J. J.\} and Huang, \{B. R.\}",

note = "Funding Information: This work was supported by National Science Council under contract numbers NSC-93-2623-7-006-003 and NSC 93-2215-E-218-013.",

year = "2005",

month = may,

day = "25",

doi = "10.1016/j.mseb.2005.03.002",

language = "English",

volume = "119",

pages = "202--205",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier Limited",

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TY - JOUR

T1 - ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates

AU - Lin, T. K.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chiou, Y. Z.

AU - Wang, C. K.

AU - Chang, S. P.

AU - Chang, C. M.

AU - Tang, J. J.

AU - Huang, B. R.

N1 - Funding Information: This work was supported by National Science Council under contract numbers NSC-93-2623-7-006-003 and NSC 93-2215-E-218-013.

PY - 2005/5/25

Y1 - 2005/5/25

N2 - Homoepitaxial and heteroepitaxial ZnSe metal-semiconductor-metal (MSM) photodetectors were both fabricated and characterized. It was found that homoepitaxial ZnSe MSM photodetector could provide us smaller dark current and large photocurrent. With an incident wavelength of 448 nm, it was found that the maximum responsivities for the homoepitaxial and heteroepitaxial ZnSe photodetectors were 0.128 and 0.045 A/W, which corresponds to a quantum efficiency of 36 and 12%, respectively. Furthermore, it was found that we achieved the minimum noise equivalent power (NEP) of 7.6 × 10 -13 W and the maximum normalized detectivity (D*) of 9.3 × 1011 cm Hz0.5 W-1 from our homoepitaxial ZnSe photodetector. In contrast, NEP and D* of the heteroepitaxial ZnSe photodetector were 2.9 × 10-12 W and 2.44 × 1011 cm Hz0.5 W-1, respectively.

AB - Homoepitaxial and heteroepitaxial ZnSe metal-semiconductor-metal (MSM) photodetectors were both fabricated and characterized. It was found that homoepitaxial ZnSe MSM photodetector could provide us smaller dark current and large photocurrent. With an incident wavelength of 448 nm, it was found that the maximum responsivities for the homoepitaxial and heteroepitaxial ZnSe photodetectors were 0.128 and 0.045 A/W, which corresponds to a quantum efficiency of 36 and 12%, respectively. Furthermore, it was found that we achieved the minimum noise equivalent power (NEP) of 7.6 × 10 -13 W and the maximum normalized detectivity (D*) of 9.3 × 1011 cm Hz0.5 W-1 from our homoepitaxial ZnSe photodetector. In contrast, NEP and D* of the heteroepitaxial ZnSe photodetector were 2.9 × 10-12 W and 2.44 × 1011 cm Hz0.5 W-1, respectively.

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U2 - 10.1016/j.mseb.2005.03.002

DO - 10.1016/j.mseb.2005.03.002

M3 - Article

AN - SCOPUS:17844409567

SN - 0921-5107

VL - 119

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JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

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ER -

ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates

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