ZnSe nanowire photodetector prepared on oxidized silicon substrate by molecular-beam epitaxy

C. H. Hsiao, S. J. Chang, S. B. Wang, S. P. Chang, T. C. Li, W. J. Lin, C. H. Ko, T. M. Kuan, B. R. Huang

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31 Citations (Scopus)

Abstract

We reported the growth of ZnSe nanowires on oxidized Si substrate by molecular-beam epitaxy. It was found that average length, average diameter, and density of the ZnSe nanowires were 1.2 μm, 48 nm, and 1.04× 107 cm -2, respectively. It was also found that the ZnSe nanowires were structurally uniform and defect-free with a pure zinc blend structure. UV photodetectors were then fabricated by sputtering a thick Au film through an interdigitated shadow mask onto the ZnSe nanowires. It was found that photocurrent to dark current contrast ratio of our ZnSe nanowire photodetector was >90 with 0.1 V applied bias.

Original languageEnglish
Pages (from-to)J73-J76
JournalJournal of the Electrochemical Society
Volume156
Issue number4
DOIs
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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