ZnSe nanowire photodetector prepared on oxidized silicon substrate by molecular-beam epitaxy

C. H. Hsiao; S. J. Chang; S. B. Wang; S. P. Chang; T. C. Li; W. J. Lin; C. H. Ko; T. M. Kuan; B. R. Huang

doi:10.1149/1.3077580

ZnSe nanowire photodetector prepared on oxidized silicon substrate by molecular-beam epitaxy

C. H. Hsiao, S. J. Chang, S. B. Wang, S. P. Chang, T. C. Li, W. J. Lin, C. H. Ko, T. M. Kuan, B. R. Huang

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31 Citations (Scopus)

Abstract

We reported the growth of ZnSe nanowires on oxidized Si substrate by molecular-beam epitaxy. It was found that average length, average diameter, and density of the ZnSe nanowires were 1.2 μm, 48 nm, and 1.04× 107 cm ^-2, respectively. It was also found that the ZnSe nanowires were structurally uniform and defect-free with a pure zinc blend structure. UV photodetectors were then fabricated by sputtering a thick Au film through an interdigitated shadow mask onto the ZnSe nanowires. It was found that photocurrent to dark current contrast ratio of our ZnSe nanowire photodetector was >90 with 0.1 V applied bias.

Original language	English
Pages (from-to)	J73-J76
Journal	Journal of the Electrochemical Society
Volume	156
Issue number	4
DOIs	https://doi.org/10.1149/1.3077580
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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title = "ZnSe nanowire photodetector prepared on oxidized silicon substrate by molecular-beam epitaxy",

abstract = "We reported the growth of ZnSe nanowires on oxidized Si substrate by molecular-beam epitaxy. It was found that average length, average diameter, and density of the ZnSe nanowires were 1.2 μm, 48 nm, and 1.04× 107 cm -2, respectively. It was also found that the ZnSe nanowires were structurally uniform and defect-free with a pure zinc blend structure. UV photodetectors were then fabricated by sputtering a thick Au film through an interdigitated shadow mask onto the ZnSe nanowires. It was found that photocurrent to dark current contrast ratio of our ZnSe nanowire photodetector was >90 with 0.1 V applied bias.",

author = "Hsiao, {C. H.} and Chang, {S. J.} and Wang, {S. B.} and Chang, {S. P.} and Li, {T. C.} and Lin, {W. J.} and Ko, {C. H.} and Kuan, {T. M.} and Huang, {B. R.}",

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T1 - ZnSe nanowire photodetector prepared on oxidized silicon substrate by molecular-beam epitaxy

AU - Hsiao, C. H.

AU - Chang, S. J.

AU - Wang, S. B.

AU - Chang, S. P.

AU - Li, T. C.

AU - Lin, W. J.

AU - Ko, C. H.

AU - Kuan, T. M.

AU - Huang, B. R.

PY - 2009

Y1 - 2009

N2 - We reported the growth of ZnSe nanowires on oxidized Si substrate by molecular-beam epitaxy. It was found that average length, average diameter, and density of the ZnSe nanowires were 1.2 μm, 48 nm, and 1.04× 107 cm -2, respectively. It was also found that the ZnSe nanowires were structurally uniform and defect-free with a pure zinc blend structure. UV photodetectors were then fabricated by sputtering a thick Au film through an interdigitated shadow mask onto the ZnSe nanowires. It was found that photocurrent to dark current contrast ratio of our ZnSe nanowire photodetector was >90 with 0.1 V applied bias.

AB - We reported the growth of ZnSe nanowires on oxidized Si substrate by molecular-beam epitaxy. It was found that average length, average diameter, and density of the ZnSe nanowires were 1.2 μm, 48 nm, and 1.04× 107 cm -2, respectively. It was also found that the ZnSe nanowires were structurally uniform and defect-free with a pure zinc blend structure. UV photodetectors were then fabricated by sputtering a thick Au film through an interdigitated shadow mask onto the ZnSe nanowires. It was found that photocurrent to dark current contrast ratio of our ZnSe nanowire photodetector was >90 with 0.1 V applied bias.

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JF - Journal of the Electrochemical Society

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ZnSe nanowire photodetector prepared on oxidized silicon substrate by molecular-beam epitaxy

Abstract

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