ZnSe/ZnCdSe heterostructure nanowires

C. H. Hsiao; Shoou-Jinn Chang; S. C. Hung; Y. C. Cheng; B. R. Huang; S. B. Wang; B. W. Lan; S. H. Chih

doi:10.1016/j.jcrysgro.2010.02.008

ZnSe/ZnCdSe heterostructure nanowires

C. H. Hsiao, Shoou-Jinn Chang, S. C. Hung, Y. C. Cheng, B. R. Huang, S. B. Wang, B. W. Lan, S. H. Chih

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The authors report the growth of high density ZnSe/ZnCdSe heterostructure nanowires on oxidized Si substrate. It was found that the as-grown nanowires were tapered with mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from these ZnSe/ZnCdSe heterostructure nanowires were much larger than observed from the homogeneous ZnSe nanowires. Furthermore, it was found that activation energies for the nanowires with well widths of 6, 12, 18 and 24 nm were 22, 41, 67 and 129 meV, respectively.

Original language	English
Pages (from-to)	1670-1675
Number of pages	6
Journal	Journal of Crystal Growth
Volume	312
Issue number	10
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.02.008
Publication status	Published - 2010 May 1

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2010.02.008

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title = "ZnSe/ZnCdSe heterostructure nanowires",

abstract = "The authors report the growth of high density ZnSe/ZnCdSe heterostructure nanowires on oxidized Si substrate. It was found that the as-grown nanowires were tapered with mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from these ZnSe/ZnCdSe heterostructure nanowires were much larger than observed from the homogeneous ZnSe nanowires. Furthermore, it was found that activation energies for the nanowires with well widths of 6, 12, 18 and 24 nm were 22, 41, 67 and 129 meV, respectively.",

author = "Hsiao, {C. H.} and Shoou-Jinn Chang and Hung, {S. C.} and Cheng, {Y. C.} and Huang, {B. R.} and Wang, {S. B.} and Lan, {B. W.} and Chih, {S. H.}",

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T1 - ZnSe/ZnCdSe heterostructure nanowires

AU - Hsiao, C. H.

AU - Chang, Shoou-Jinn

AU - Hung, S. C.

AU - Cheng, Y. C.

AU - Huang, B. R.

AU - Wang, S. B.

AU - Lan, B. W.

AU - Chih, S. H.

PY - 2010/5/1

Y1 - 2010/5/1

N2 - The authors report the growth of high density ZnSe/ZnCdSe heterostructure nanowires on oxidized Si substrate. It was found that the as-grown nanowires were tapered with mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from these ZnSe/ZnCdSe heterostructure nanowires were much larger than observed from the homogeneous ZnSe nanowires. Furthermore, it was found that activation energies for the nanowires with well widths of 6, 12, 18 and 24 nm were 22, 41, 67 and 129 meV, respectively.

AB - The authors report the growth of high density ZnSe/ZnCdSe heterostructure nanowires on oxidized Si substrate. It was found that the as-grown nanowires were tapered with mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from these ZnSe/ZnCdSe heterostructure nanowires were much larger than observed from the homogeneous ZnSe nanowires. Furthermore, it was found that activation energies for the nanowires with well widths of 6, 12, 18 and 24 nm were 22, 41, 67 and 129 meV, respectively.

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VL - 312

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EP - 1675

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

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ER -

ZnSe/ZnCdSe heterostructure nanowires

Abstract

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