ZnSnOy/ZnSnOxBilayer Transparent Memristive Synaptic Device for Neuromorphic Computing

Dayanand Kumar, Aftab Saleem, Lai Boon Keong, Amit Singh, Yeong Her Wang, Tseung Yuen Tseng

Research output: Contribution to journalArticlepeer-review

Abstract

In this letter, we have investigated synaptic features of a transparent bilayer memristor for neuromorphic computing applications. Our device has shown stable synaptic characteristics like potentiation and depression for repetitive 5000 epochs having 400 conductance pulses each. The device has also shown highly linear synaptic features with linearity of 1.2 and -1.4 for potentiation and depression, respectively. Retention property of bilayer transparent synapse showed good stability for 105 s at 90°C. Multi-Level Cell (MLC) characteristics were achieved by varying reset stop voltages from -0.7V to -1.0V. The proposed bilayer transparent synapse showed good synaptic characteristics and showed high potential to be used in future neuromorphic computing systems.

Original languageEnglish
Pages (from-to)1211-1214
Number of pages4
JournalIEEE Electron Device Letters
Volume43
Issue number8
DOIs
Publication statusPublished - 2022 Aug 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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