ZnSTeSe metal-semiconductor-metal photodetectors

S. J. Chang, Y. K. Su, W. R. Chen, J. F. Chen, W. H. Lan, W. J. Lin, Y. T. Cherng, C. H. Liu, U. H. Liaw

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

High-quality quaternary ZnSTeSe epitaxial layers were successfully grown by molecular beam epitaxy (MBE). It was found that a ZnS0.18Se0.82 layer was automatically formed in between the ZnSe buffer layer, and the ZnS0.17Te0.08Se0.75 epitaxial layer, when we increased the ZnS cell temperature. ZnSTeSe metal-semiconductor-metal (MSM) photodetectors were also fabricated for the first time. It was found that we could achieve a photo current to dark current contrast higher than five orders of magnitude by applying a 10-V reverse bias. We also found that the maximum photo responsivity is about 0.4 A/W under a 10-V reverse bias. Such a value suggests that the ZnSTeSe MSM photodetector is potentially useful in the blue-UV spectral region.

Original languageEnglish
Pages (from-to)188-190
Number of pages3
JournalIEEE Photonics Technology Letters
Volume14
Issue number2
DOIs
Publication statusPublished - 2002 Feb

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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