ZnSTeSe metal-semiconductor-metal photodetectors

S. J. Chang; Y. K. Su; W. R. Chen; J. F. Chen; W. H. Lan; W. J. Lin; Y. T. Cherng; C. H. Liu; U. H. Liaw

doi:10.1109/68.980508

ZnSTeSe metal-semiconductor-metal photodetectors

S. J. Chang, Y. K. Su, W. R. Chen, J. F. Chen, W. H. Lan, W. J. Lin, Y. T. Cherng, C. H. Liu, U. H. Liaw

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

High-quality quaternary ZnSTeSe epitaxial layers were successfully grown by molecular beam epitaxy (MBE). It was found that a ZnS_0.18Se_0.82 layer was automatically formed in between the ZnSe buffer layer, and the ZnS_0.17Te_0.08Se_0.75 epitaxial layer, when we increased the ZnS cell temperature. ZnSTeSe metal-semiconductor-metal (MSM) photodetectors were also fabricated for the first time. It was found that we could achieve a photo current to dark current contrast higher than five orders of magnitude by applying a 10-V reverse bias. We also found that the maximum photo responsivity is about 0.4 A/W under a 10-V reverse bias. Such a value suggests that the ZnSTeSe MSM photodetector is potentially useful in the blue-UV spectral region.

Original language	English
Pages (from-to)	188-190
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	14
Issue number	2
DOIs	https://doi.org/10.1109/68.980508
Publication status	Published - 2002 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.980508

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title = "ZnSTeSe metal-semiconductor-metal photodetectors",

abstract = "High-quality quaternary ZnSTeSe epitaxial layers were successfully grown by molecular beam epitaxy (MBE). It was found that a ZnS0.18Se0.82 layer was automatically formed in between the ZnSe buffer layer, and the ZnS0.17Te0.08Se0.75 epitaxial layer, when we increased the ZnS cell temperature. ZnSTeSe metal-semiconductor-metal (MSM) photodetectors were also fabricated for the first time. It was found that we could achieve a photo current to dark current contrast higher than five orders of magnitude by applying a 10-V reverse bias. We also found that the maximum photo responsivity is about 0.4 A/W under a 10-V reverse bias. Such a value suggests that the ZnSTeSe MSM photodetector is potentially useful in the blue-UV spectral region.",

author = "Chang, {S. J.} and Su, {Y. K.} and Chen, {W. R.} and Chen, {J. F.} and Lan, {W. H.} and Lin, {W. J.} and Cherng, {Y. T.} and Liu, {C. H.} and Liaw, {U. H.}",

note = "Funding Information: Manuscript received July 5, 2001; revised October 15, 2001. This work was supported by the National Science Council under Contract NSC-89-2215-E-006-095. S. J. Chang, Y. K. Su, W. R. Chen, and J. F. Chen are with the Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan, 70101 Taiwan, R.O.C. W. H. Lan, W. J. Lin, and Y. T. Cherng are with the Chung Shan Institute of Science and Technology, Taoyuan, Taiwan 325, R.O.C. C. H. Liu is with the Department of Electronic Engineering, Nan-Jeon Junior College of Technology and Commerce, Yan-Hsui, 737 Taiwan, R.O.C. U. H. Liaw is with the Department of Electronic Engineering, Chin-Min College, To-Fen, 351 Taiwan, R.O.C. Publisher Item Identifier S 1041-1135(02)00252-5.",

year = "2002",

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doi = "10.1109/68.980508",

language = "English",

volume = "14",

pages = "188--190",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

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AU - Chang, S. J.

AU - Su, Y. K.

AU - Chen, W. R.

AU - Chen, J. F.

AU - Lan, W. H.

AU - Lin, W. J.

AU - Cherng, Y. T.

AU - Liu, C. H.

AU - Liaw, U. H.

N1 - Funding Information: Manuscript received July 5, 2001; revised October 15, 2001. This work was supported by the National Science Council under Contract NSC-89-2215-E-006-095. S. J. Chang, Y. K. Su, W. R. Chen, and J. F. Chen are with the Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan, 70101 Taiwan, R.O.C. W. H. Lan, W. J. Lin, and Y. T. Cherng are with the Chung Shan Institute of Science and Technology, Taoyuan, Taiwan 325, R.O.C. C. H. Liu is with the Department of Electronic Engineering, Nan-Jeon Junior College of Technology and Commerce, Yan-Hsui, 737 Taiwan, R.O.C. U. H. Liaw is with the Department of Electronic Engineering, Chin-Min College, To-Fen, 351 Taiwan, R.O.C. Publisher Item Identifier S 1041-1135(02)00252-5.

PY - 2002/2

Y1 - 2002/2

N2 - High-quality quaternary ZnSTeSe epitaxial layers were successfully grown by molecular beam epitaxy (MBE). It was found that a ZnS0.18Se0.82 layer was automatically formed in between the ZnSe buffer layer, and the ZnS0.17Te0.08Se0.75 epitaxial layer, when we increased the ZnS cell temperature. ZnSTeSe metal-semiconductor-metal (MSM) photodetectors were also fabricated for the first time. It was found that we could achieve a photo current to dark current contrast higher than five orders of magnitude by applying a 10-V reverse bias. We also found that the maximum photo responsivity is about 0.4 A/W under a 10-V reverse bias. Such a value suggests that the ZnSTeSe MSM photodetector is potentially useful in the blue-UV spectral region.

AB - High-quality quaternary ZnSTeSe epitaxial layers were successfully grown by molecular beam epitaxy (MBE). It was found that a ZnS0.18Se0.82 layer was automatically formed in between the ZnSe buffer layer, and the ZnS0.17Te0.08Se0.75 epitaxial layer, when we increased the ZnS cell temperature. ZnSTeSe metal-semiconductor-metal (MSM) photodetectors were also fabricated for the first time. It was found that we could achieve a photo current to dark current contrast higher than five orders of magnitude by applying a 10-V reverse bias. We also found that the maximum photo responsivity is about 0.4 A/W under a 10-V reverse bias. Such a value suggests that the ZnSTeSe MSM photodetector is potentially useful in the blue-UV spectral region.

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

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ER -

ZnSTeSe metal-semiconductor-metal photodetectors

Abstract

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