具有混合掘入式閘極結構之氮化鎵/氮化鋁鎵增強型高電子移動率電晶體之研製

Translated title of the thesis: Fabrication of Enhancement-Mode GaN/AlGaN High Electron Mobility Transistors (HEMTs) with Hybrid Recessed-Gate Structures
  • 林 岳璋

Student thesis: Master's Thesis

Abstract

Date of Award2017 Jul 13
Original languageChinese
SupervisorWen-Chau Liu (Supervisor)

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