寫入方向對氧化鉭雙層電阻式記憶體自我整流現象之影響

Translated title of the thesis: Influence of the polarity of SET process on self-rectifying characteristics of tantalum oxide-based bilayer resistive switching memories
  • 陳 奕儒

Student thesis: Master's Thesis

Abstract

Date of Award2018 Aug 22
Original languageChinese
SupervisorJen-Sue Chen (Supervisor)

Cite this

寫入方向對氧化鉭雙層電阻式記憶體自我整流現象之影響
奕儒, 陳. (Author). 2018 Aug 22

Student thesis: Master's Thesis