適用於液晶顯示器之新式非晶矽/非晶相銦鎵鋅氧化物閘極驅動電路設計

Abstract

This thesis presents five new gate driver circuits, including three amorphous silicon thin-film transistor (a-Si:H TFT) circuits and two amorphous In-Ga-Zn-O (a-IGZO) TFT circuits. For applying to the slim border panel, three new a-Si:H gate driver circuits are all simple structure to reduce the layout area. Moreover, three a-Si:H gate driver circuits utilize the AC-driving method to suppress the VTH shift of a-Si:H TFT. On the other hand, in order to prevent the incorrect circuit operation and reduce the power consumption which caused by the leakage current of a-IGZO TFTs, all TFTs can be completely turned off in the two proposed a-IGZO gate drivers. The feasibility of the proposed gate driver circuits are verified through the Hspice simulator. Based on the simulation results, three a-Si:H gate drivers can successfully generate output waveforms with simple circuit structure, and two a-IGZO gate drivers can achieve low-power consumption by suppressing the leakage current.

Date of Award	2014
Original language	Chinese (Traditional)
Supervisor	Chih-Lung Lin (Supervisor)