Analysis of Different Nano Fin Width in AlGaN/GaN heterostructure FinFET

Abstract

Three types of AlGaN / GaN fin-shaped field effect transistors (FinFETs) on sapphire substrate with fin widths (Wfin) of 50nm 80nm and 110nm have been fabricated Each device have been characterized by DC characteristics pulse voltage and high frequency S-parameters The threshold voltages of each device shift toward positive value as the ?n width decreases which is correspond with the theoretical value However the narrorer fin width gives to smaller output power which leads to smaller transconductance (gm) larger sub-threshold swing (S S ) slower cutoff frequency (fT) and maximum gain frequency (fmax) The reason may be that the in?uence of source resistance (Rs) which enhances when fin length (L?n) increases When the fin width decreases the unit surface area and surface defects increase forming leakage paths which causes the deterioration of the device characteristics In this experiment nano-scaled fin width of FinFETs on sapphire substrate was fabricate it will be more feasible to develop nano-level research on non-conductive substrates

Date of Award	2020
Original language	English
Supervisor	Wei-Chi Lai (Supervisor)