Applications of High Electron Density Layer in Plasmonics

Abstract

We have discussed the application of high electron density layer in plasmonics in this thesis including the nanofabrication and using the finite element analysis method to expect the result of experiment In first part of the thesis we use the accumulation layer which is created at the interface between insulator and transparent conductive oxide to excite surface plasmon polaritons following the standard analysis of a MOS structure we derive the electron density and surface potential in accumulation layer within the ITO material and describe the optical characteristics of ITO with and within accumulation layer by Drude model we successfully excite surface plasmon polaritons by end-fired coupling and make the surface plasmon polaritons be confined in the area we apply voltage and we demonstrate wave vector exchange by different bias in conclusion the tunable plasmon device has been present In second part of the thesis we use the AlGaN/GaN HEMT which is applied to sensing application the gateless structure is used in the study due to surface state changed by charge the sheet electron concentration of 2DEG being changed in order to maintain the charge neutrality this is the reason why use it to be the sensor we fabricate the nanoellipse arrays by nanospherical-lens lithography at the sensing region which LSPR response is at 980 nm and we illuminate the 980 nm laser to find out variety of current as well as monitor the temperature in experiment Finally we demonstrate the model of hot carrier which is created by LSPR effect and how it inject to the device as well as explain why does the current rise when 980 nm laser is illuminating

Date of Award	2020
Original language	English
Supervisor	Yung-Chiang Lan (Supervisor)