Since the advent of Moore's Law in 1964 the evolution of semiconductor process technology has been progressed to 5nm technology node (N5) In the process of size reduction the short channel effect becomes more serious and the quantum confinement effect becomes more and more obvious To solve these problems the International Semiconductor Technology Development Roadmap (ITRS) proposes many emerging components The single-electron transistor using tunneling effect and Coulomb blocking oscillation effect as the mechanism of electron conduction not only improves the short-channel effect but is compatible with the silicon process and can also use the quantum confinement effect in turn However its operation is easily affected by the thermal disturbance caused by the ambient temperature so it is not suitable for practical application at room temperature In this thesis we theoretically estimate the conditions required for a single-electron transistor that can be operated at room temperature; and refer to the published simulation parameters and experimental data of a silicon quantum dot single-electron transistor that can be operated at room temperature We utilize SIMON a single electron device and circuit simulator to establish a model of complementary single electron transistor in-verter circuits Finally based on the existing device parameters and theory we adjust the parameters of gate capacitances and the tunneling barrier capacitances discuss how to make the noise margin larger to optimize the DC characteristics of the circuit model and propose a feasible circuit design methodology
Assessment of Inverter Circuits using Silicon Quantum Dot-Based Single-Electron Transistors at Room Temperature
儷靜, 王. (Author). 2019
Student thesis: Doctoral Thesis